FinFET SRAM cell using low mobility plane for cell stability and method for forming DM Fried, RW Mann, KP Muller, EJ Nowak
US Patent 7,087,477, 2006
340 2006 Fluctuation limits & scaling opportunities for CMOS SRAM cells A Bhavnagarwala, S Kosonocky, C Radens, K Stawiasz, R Mann, Q Ye, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
211 2005 SRAM cell design for stability methodology C Wann, R Wong, DJ Frank, R Mann, SB Ko, P Croce, D Lea, D Hoyniak, ...
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005
175 2005 Finfet SRAM cell using low mobility plane for cell stability and method for forming DM Fried, RW Mann, KP Muller, EJ Nowak
US Patent 6,967,351, 2005
153 2005 Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation RW Mann, GL Miles, TA Knotts, DW Rakowski, LA Clevenger, JME Harper, ...
Applied physics letters 67 (25), 3729-3731, 1995
148 1995 Silicides and local interconnections for high-performance VLSI applications RW Mann, LA Clevenger, PD Agnello, FR White
IBM Journal of Research and Development 39 (4), 403-417, 1995
133 1995 Lateral ion implant straggle and mask proximity effect TB Hook, J Brown, P Cottrell, E Adler, D Hoyniak, J Johnson, R Mann
IEEE Transactions on Electron Devices 50 (9), 1946-1951, 2003
131 2003 Semiconductor integrated test structures for electron beam inspection of semiconductor wafers MC Sun, S Jansen, R Mann, OD Patterson
US Patent 7,679,083, 2010
123 2010 High performance and low power transistors integrated in 65nm bulk CMOS technology Z Luo, A Steegen, M Eller, R Mann, C Baiocco, P Nguyen, L Kim, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
105 2004 Enchanced multi-threshold (mtcmos) circuits using variable well bias SV Kosonocky, M Immediato, P Cottrell, T Hook, R Mann, J Brown
Proceedings of the 2001 international symposium on Low power electronics and …, 2001
99 2001 Semiconductor structure incorporating thin film transistors with undoped cap oxide layers BA Chen, SB Kulkarni, JB Lasky, RW Mann, EJ Nowak, WA Rausch, ...
US Patent 5,675,185, 1997
96 1997 The C49 to C54 phase transformation in TiSi2 thin films RW Mann, LA Clevenger
Journal of The Electrochemical Society 141 (5), 1347, 1994
96 1994 Sub-threshold circuit design with shrinking CMOS devices BH Calhoun, S Khanna, R Mann, J Wang
2009 IEEE International Symposium on Circuits and Systems, 2541-2544, 2009
87 2009 Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates LA Clevenger, JME Harper, C Cabral Jr, C Nobili, G Ottaviani, R Mann
Journal of applied physics 72 (10), 4978-4980, 1992
87 1992 Low temperature formation of using titanium alloys C Cabral Jr, LA Clevenger, JME Harper, FM d’Heurle, RA Roy, C Lavoie, ...
Applied physics letters 71 (24), 3531-3533, 1997
84 1997 Impact of circuit assist methods on margin and performance in 6T SRAM RW Mann, J Wang, S Nalam, S Khanna, G Braceras, H Pilo, BH Calhoun
Solid-State Electronics 54 (11), 1398-1407, 2010
75 2010 Borderless contact to diffusion with respect to gate conductor and methods for fabricating JA Bruce, JD Chapple-Sokol, CW Koburger III, MJ Lercel, RW Mann, ...
US Patent 6,498,096, 2002
67 2002 Grounded body SOI SRAM cell F Assaderaghi, A Bryant, PE Cottrell, RJ Gauthier Jr, RW Mann, EJ Nowak, ...
US Patent 6,646,305, 2003
64 2003 Study of C49‐TiSi2 and C54‐TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing LA Clevenger, RW Mann, RA Roy, KL Saenger, C Cabral Jr, J Piccirillo
Journal of Applied Physics 76 (12), 7874-7881, 1994
64 1994 Ultralow-power SRAM technology RW Mann, WW Abadeer, MJ Breitwisch, O Bula, JS Brown, BC Colwill, ...
IBM Journal of Research and Development 47 (5.6), 553-566, 2003
63 2003