Követés
Hongtao Xu
Hongtao Xu
E-mail megerősítve itt: fudan.edu.cn
Cím
Hivatkozott rá
Hivatkozott rá
Év
Universal front end module for networking device
N Rohani, H Xu, Y Tan
US Patent 8,364,102, 2013
1422013
The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
C Sanabria, A Chakraborty, H Xu, MJ Rodwell, UK Mishra, RA York
IEEE electron device letters 27 (1), 19-21, 2005
1102005
Tunable microwave integrated circuits using BST thin film capacitors with device structure optimization
H Xu, NK Pervez, RA York
Integrated Ferroelectrics 77 (1), 27-35, 2005
1092005
A flip-chip-packaged 25.3 dBm class-D outphasing power amplifier in 32 nm CMOS for WLAN application
H Xu, Y Palaskas, A Ravi, M Sajadieh, MA El-Tanani, K Soumyanath
IEEE Journal of Solid-State Circuits 46 (7), 1596-1605, 2011
1072011
A 2.4-GHz 20–40-MHz channel WLAN digital outphasing transmitter utilizing a delay-based wideband phase modulator in 32-nm CMOS
A Ravi, P Madoglio, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ...
IEEE Journal of Solid-State Circuits 47 (12), 3184-3196, 2012
1012012
Monolithic flexible power amplifier using integrated tunable matching networks
N Rohani, H Xu, Y Tan
US Patent 7,567,129, 2009
972009
A C-band high-dynamic range GaN HEMT low-noise amplifier
H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York
IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004
922004
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
H Xu, S Gao, S Heikman, SI Long, UK Mishra, RA York
IEEE microwave and wireless components letters 16 (1), 22-24, 2005
902005
A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement
W Tai, H Xu, A Ravi, H Lakdawala, O Bochobza-Degani, LR Carley, ...
IEEE Journal of Solid-State Circuits 47 (7), 1646-1658, 2012
852012
A 20dBm 2.4 GHz digital outphasing transmitter for WLAN application in 32nm CMOS
P Madoglio, A Ravi, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ...
2012 IEEE International Solid-State Circuits Conference, 168-170, 2012
542012
13.6 A 2.4 GHz WLAN digital polar transmitter with synthesized digital-to-time converter in 14nm trigate/FinFET technology for IoT and wearable applications
P Madoglio, H Xu, K Chandrashekar, L Cuellar, M Faisal, WY Li, HS Kim, ...
2017 IEEE International Solid-State Circuits Conference (ISSCC), 226-227, 2017
492017
Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT
S Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, ...
2006 European Microwave Integrated Circuits Conference, 493-496, 2006
452006
Wi-Fi RF energy harvesting for battery-free wearable radio platforms
V Talla, S Pellerano, H Xu, A Ravi, Y Palaskas
2015 IEEE International Conference on RFID (RFID), 47-54, 2015
442015
A broadband switched-transformer digital power amplifier for deep back-off efficiency enhancement
Y Yin, T Li, L Xiong, Y Li, H Min, N Yan, H Xu
IEEE Journal of Solid-State Circuits 55 (11), 2997-3008, 2020
372020
A highly linear 25dBm outphasing power amplifier in 32nm CMOS for WLAN application
H Xu, Y Palaskas, A Ravi, K Soumyanath
2010 Proceedings of ESSCIRC, 306-309, 2010
362010
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/thin films with AlGaN/GaN HEMT circuits
H Xu, NK Pervez, PJ Hansen, L Shen, S Keller, UK Mishra, RA York
IEEE Electron Device Letters 25 (2), 49-51, 2004
362004
A compact dual-band digital doherty power amplifier using parallel-combining transformer for cellular NB-IoT applications
Y Yin, L Xiong, Y Zhu, B Chen, H Min, H Xu
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 408-410, 2018
332018
A 28.1 dBm class-D outphasing power amplifier in 45nm LP digital CMOS
H Xu, Y Palaskas, A Ravi, M Sajadieh, M Elmala, K Soumyanath
2009 Symposium on VLSI Circuits, 206-207, 2009
312009
Two-stage quasi-class-E power amplifier in GaN HEMT technology
S Gao, H Xu, S Heikman, UK Mishra, RA York
IEEE Microwave and Wireless Components Letters 16 (1), 28-30, 2005
312005
A GaN differential oscillator with improved harmonic performance
C Sanabria, H Xu, S Heikman, UK Mishra, RA York
IEEE microwave and wireless components letters 15 (7), 463-465, 2005
292005
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