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Gilles Horowitz
Gilles Horowitz
Directeur de recherche émérite, Centre National de la Recherche Scientifique
Bestätigte E-Mail-Adresse bei polytechnique.edu
Titel
Zitiert von
Zitiert von
Jahr
Organic field‐effect transistors
G Horowitz
Advanced materials 10 (5), 365-377, 1998
35221998
Organic thin film transistors: From theory to real devices
G Horowitz
Journal of materials research 19 (7), 1946-1962, 2004
10902004
Molecular engineering of organic semiconductors: design of self-assembly properties in conjugated thiophene oligomers
F Garnier, A Yassar, R Hajlaoui, G Horowitz, F Deloffre, B Servet, S Ries, ...
Journal of the American Chemical Society 115 (19), 8716-8721, 1993
9861993
High‐performance organic field‐effect transistors
D Braga, G Horowitz
Advanced materials 21 (14‐15), 1473-1486, 2009
8182009
A field-effect transistor based on conjugated alpha-sexithienyl
G Horowitz, D Fichou, X Peng, Z Xu, F Garnier
Solid State Communications 72 (4), 381-384, 1989
7501989
An all‐organic" soft" thin film transistor with very high carrier mobility
F Garnier, G Horowitz, X Peng, D Fichou
Advanced Materials 2 (12), 592-594, 1990
7481990
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
G Horowitz, ME Hajlaoui, R Hajlaoui
Journal of Applied Physics 87 (9), 4456-4463, 2000
7332000
Growth and characterization of sexithiophene single crystals
G Horowitz, B Bachet, A Yassar, P Lang, F Demanze, JL Fave, F Garnier
Chemistry of materials 7 (7), 1337-1341, 1995
6651995
Mobility in polycrystalline oligothiophene field‐effect transistors dependent on grain size
G Horowitz, ME Hajlaoui
Advanced Materials 12 (14), 1046-1050, 2000
4772000
The concept of “threshold voltage” in organic field‐effect transistors
G Horowitz, R Hajlaoui, H Bouchriha, R Bourguiga, M Hajlaoui
Advanced Materials 10 (12), 923-927, 1998
4101998
Gate voltage dependent mobility of oligothiophene field-effect transistors
G Horowitz, R Hajlaoui, D Fichou, A El Kassmi
Journal of Applied Physics 85 (6), 3202-3206, 1999
3941999
Stoichiometric control of the successive generation of the radical cation and dication of extended α-conjugated oligothiophenes: a quantitative model for doped polythiophene
D Fichou, G Horowitz, B Xu, F Garnier
Synthetic metals 39 (2), 243-259, 1990
3811990
Evidence for n‐type conduction in a perylene tetracarboxylic diimide derivative
G Horowitz, F Kouki, P Spearman, D Fichou, C Nogues, X Pan, F Garnier
Advanced Materials 8 (3), 242-245, 1996
3721996
Temperature dependence of the field-effect mobility of sexithiophene. Determination of the density of traps
G Horowitz, R Hajlaoui, P Delannoy
Journal de Physique III 5 (4), 355-371, 1995
3721995
An analytical model for organic‐based thin‐film transistors
G Horowitz, P Delannoy
Journal of Applied Physics 70 (1), 469-475, 1991
3601991
Advances in organic transistor-based biosensors: from organic electrochemical transistors to electrolyte-gated organic field-effect transistors
L Kergoat, B Piro, M Berggren, G Horowitz, MC Pham
Analytical and bioanalytical chemistry 402, 1813-1826, 2012
3562012
Polymorphism and charge transport in vacuum-evaporated sexithiophene films
B Servet, G Horowitz, S Ries, O Lagorsse, P Alnot, A Yassar, F Deloffre, ...
Chemistry of materials 6 (10), 1809-1815, 1994
3561994
A water‐gate organic field‐effect transistor
L Kergoat, L Herlogsson, D Braga, B Piro, MC Pham, X Crispin, ...
Advanced Materials 22 (23), 2565-2569, 2010
3312010
The oligothiophene‐based field‐effect transistor: How it works and how to improve it
G Horowitz, X Peng, D Fichou, F Garnier
Journal of Applied Physics 67 (1), 528-532, 1990
3231990
Field‐effect transistor made with a sexithiophene single crystal
G Horowitz, F Garnier, A Yassar, R Hajlaoui, F Kouki
Advanced Materials 8 (1), 52-54, 1996
2911996
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