| Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes R Charash, PP Maaskant, L Lewis, C McAleese, MJ Kappers, ... Applied Physics Letters 95 (15), 2009 | 57 | 2009 |
| Growth optimization and characterization of lattice-matched Al0. 82In0. 18N optical confinement layer for edge emitting nitride laser diodes H Kim-Chauveau, E Frayssinet, B Damilano, P De Mierry, L Bodiou, ... Journal of crystal growth 338 (1), 20-29, 2012 | 15 | 2012 |
| Cleaved-facet violet laser diodes with lattice-matched Al0. 82In0. 18N/GaN multilayers as n-cladding R Charash, H Kim-Chauveau, JM Lamy, M Akther, PP Maaskant, ... Applied Physics Letters 98 (20), 2011 | 10 | 2011 |
| AlInN optical confinement layers for edge emitting group III‐nitride laser structures HPD Schenk, M Nemoz, M Korytov, P Vennéguès, P Demolon, AD Dräger, ... physica status solidi c 6 (S2 2), S897-S901, 2009 | 7 | 2009 |
| Current transport through AlInN/GaN multilayers used as n‐type cladding layers in edge emitting laser diodes R Charash, H Kim‐Chauveau, A Vajpeyi, M Akther, PP Maaskant, ... physica status solidi c 8 (7‐8), 2378-2380, 2011 | 6 | 2011 |
| Current transport through an n‐doped, nearly lattice matched GaN/AlInN/GaN heterostructure B Corbett, R Charash, B Damilano, H Kim‐Chauveau, N Cordero, ... physica status solidi c 9 (3‐4), 931-933, 2012 | 3 | 2012 |
| Carrier distribution in InGaN R CHARASH, PP MAASKANT, L LEWIS, C MCALEESE, MJ KAPPERS, ... Applied physics letters 95 (15), 2009 | | 2009 |
