Vincent Gambin
Vincent Gambin
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
Y Liu, J Guo, E Zhu, L Liao, SJ Lee, M Ding, I Shakir, V Gambin, Y Huang, ...
Nature 557 (7707), 696-700, 2018
Growth of semiconducting graphene on palladium
SY Kwon, CV Ciobanu, V Petrova, VB Shenoy, J Bareno, V Gambin, ...
Nano letters 9 (12), 3985-3990, 2009
Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy
V Lordi, V Gambin, S Friedrich, T Funk, T Takizawa, K Uno, JS Harris
Physical Review Letters 90 (14), 145505, 2003
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
Nitrogen-related electron traps in Ga(As,N) layers
P Krispin, V Gambin, JS Harris, KH Ploog
Journal of Applied Physics 93 (10), 6095-6099, 2003
GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy
V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
Long-wavelength GaInNAs (Sb) lasers on GaAs
W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition
X Zhang, Z Jin, L Wang, JA Hachtel, E Villarreal, Z Wang, T Ha, ...
ACS applied materials & interfaces 11 (13), 12777-12785, 2019
A 1–25 GHz GaN HEMT MMIC low-noise amplifier
M Chen, W Sutton, I Smorchkova, B Heying, WB Luo, V Gambin, F Oshita, ...
IEEE Microwave and Wireless Components Letters 20 (10), 563-565, 2010
Integrated nanomaterials for extreme thermal management: A perspective for aerospace applications
MT Barako, V Gambin, J Tice
Nanotechnology 29 (15), 154003, 2018
Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
W Ha, V Gambin, M Wistey, S Bank, H Yuen, S Kim, JS Harris Jr
Electronics Letters 38 (6), 277-278, 2002
Vertical charge transport and negative transconductance in multilayer molybdenum disulfides
Y Liu, J Guo, Q He, H Wu, HC Cheng, M Ding, I Shakir, V Gambin, ...
Nano Letters 17 (9), 5495-5501, 2017
Thermal conduction inhomogeneity of nanocrystalline diamond films by dual-side thermoreflectance
E Bozorg-Grayeli, A Sood, M Asheghi, V Gambin, R Sandhu, TI Feygelson, ...
Applied Physics Letters 102 (11), 2013
Wafer-scale black arsenic–phosphorus thin-film synthesis validated with density functional perturbation theory predictions
EP Young, J Park, T Bai, C Choi, RH DeBlock, M Lange, S Poust, J Tice, ...
ACS Applied Nano Materials 1 (9), 4737-4745, 2018
Temperature and voltage dependent RF degradation study in AlGaN/GaN HEMTs
R Coffie, Y Chen, IP Smorchkova, B Heying, V Gambin, W Sutton, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
1.5 μm GaInNAs (Sb) lasers grown on GaAs by MBE
S Bank, W Ha, V Gambin, M Wistey, H Yuen, L Goddard, S Kim, ...
Journal of crystal growth 251 (1-4), 367-371, 2003
Ambipolar barristors for reconfigurable logic circuits
Y Liu, G Zhang, H Zhou, Z Li, R Cheng, Y Xu, V Gambin, Y Huang, ...
Nano Letters 17 (3), 1448-1454, 2017
In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy
B Heying, IP Smorchkova, R Coffie, V Gambin, YC Chen, W Sutton, T Lam, ...
Electronics Letters 43 (14), 779-780, 2007
AIN buffer N-polar GaN HEMT profile
V Gambin, X Gu, B Heying
US Patent 8,710,511, 2014
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20