C. Claeys
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Germanium-based technologies: from materials to devices
C Claeys, E Simoen
elsevier, 2011
Radiation effects in advanced semiconductor materials and devices
C Claeys, E Simoen
Springer Science & Business Media, 2013
Silicon-on-insulator'gate-all-around device'
JP Colinge, MH Gao, A Romano-Rodriguez, H Maes, C Claeys
International technical digest on electron devices, 595-598, 1990
On the flicker noise in submicron silicon MOSFETs
E Simoen, C Claeys
Solid-State Electronics 43 (5), 865-882, 1999
Low temperature electronics: physics, devices, circuits, and applications
EA Gutierrez-D, MJ Deen, CL Claeys
Academic Press, 2001
A foveated retina-like sensor using CCD technology
J Van der Spiegel, G Kreider, C Claeys, I Debusschere, G Sandini, ...
Analog VLSI implementation of neural systems, 189-211, 1989
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E Simoen, B Dierickx, CL Claeys, GJ Declerck
IEEE Transactions on Electron Devices 39 (2), 422-429, 1992
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
E Simoen, A Mercha, L Pantisano, C Claeys, E Young
IEEE transactions on electron devices 51 (5), 780-784, 2004
A 1006 element hybrid silicon pixel detector with strobed binary output
F Anghinolfi, P Aspell, K Bass, W Beusch, L Bosisio, C Boutonnet, ...
IEEE transactions on nuclear science 39 (4), 654-661, 1992
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
Impact of oxygen related extended defects on silicon diode characteristics
J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys
Journal of Applied Physics 77 (11), 5669-5676, 1995
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions
G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE Transactions on Electron Devices 55 (9), 2287-2296, 2008
Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates
ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ...
Journal of the Electrochemical Society 143 (9), 3014, 1996
Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ...
Materials Science in Semiconductor Processing 15 (6), 588-600, 2012
New technologies for learning: Contribution of ICT to innovation in education
R Dillemans, J Lowyck, G Van derPerre, C Claeys, J Elen
Leuven University Press; Leuven, 1998
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
Temperature impact on the tunnel fet off-state current components
PG Der Agopian, MDV Martino, SG dos Santos Filho, JA Martino, ...
Solid-state electronics 78, 141-146, 2012
Random Telegraph Signal: a local probe for single point defect studies in solid-state devices
E Simoen, C Claeys
Materials Science and Engineering: B 91, 136-143, 2002
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