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Dr. Shivam Verma
Dr. Shivam Verma
Department of Electronics Engineering, IIT BHU
Verified email at iitbhu.ac.in - Homepage
Title
Cited by
Cited by
Year
Next generation spin torque memories
BK Kaushik, S Verma, AA Kulkarni, S Prajapati
Springer, 2017
242017
Spintronics-based devices to circuits: Perspectives and challenges
S Verma, AA Kulkarni, BK Kaushik
IEEE Nanotechnology Magazine 10 (4), 13-28, 2016
232016
Novel 4F2 Buried-Source-Line STT MRAM Cell With Vertical GAA Transistor as Select Device
S Verma, S Kaundal, BK Kaushik
IEEE Transactions on Nanotechnology 13 (6), 1163-1171, 2014
222014
Modeling of a magnetic tunnel junction for a multilevel STT-MRAM cell
S Prajapati, S Verma, AA Kulkarni, BK Kaushik
IEEE Transactions on Nanotechnology 18, 1005-1014, 2018
162018
Low-power high-density STT MRAMs on a 3-D vertical silicon nanowire platform
S Verma, BK Kaushik
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (4 …, 2015
152015
Spin Transfer Torque (STT) Based Devices, Circuits, and Memory
SV Brajesh Kumar Kaushik
ARTECH HOUSE 1, 302, 2016
132016
Non-volatile latch compatible with static and dynamic CMOS for logic in memory applications
S Verma, R Paul, M Shukla
IEEE Transactions on Magnetics 58 (4), 1-8, 2022
92022
All spin logic: A micromagnetic perspective
S Verma, MS Murthy, BK Kaushik
IEEE Transactions on Magnetics 51 (10), 1-10, 2015
82015
Modeling of in-plane magnetic tunnel junction for mixed mode simulations
S Verma, S Kaundal, BK Kaushik
IEEE Transactions on Magnetics 50 (8), 1-7, 2014
82014
Optimal Boolean Logic Quantum Circuit Decomposition for Spin-Torque-Based -Qubit Architecture
A Kulkarni, S Prajapati, S Verma, BK Kaushik
IEEE Transactions on Magnetics 54 (10), 1-9, 2018
72018
Performance Enhancement of STT MRAM Using Asymmetric-Sidewall-Spacer NMOS
S Verma, PK Pal, S Mahawar, BK Kaushik
IEEE Transactions on Electron Devices 63 (7), 2771-2776, 2016
72016
Area-efficient auto-write-terminate circuit for NV latch and logic-in-memory applications
J Rajpoot, S Verma
IEEE Transactions on Circuits and Systems II: Express Briefs 70 (7), 2630-2634, 2023
42023
Low power STT MRAM cell with asymmetric drive current vertical GAA select device
S Verma, S Mahawar, BK Kaushik
2015 12th International Conference on Electrical Engineering/Electronics …, 2015
42015
SPICE Based Compact Model for Voltage-induced Magnetocapacitance in Magnetic Tunnel Junctions
J Rajpoot, R Paul, S Verma
IEEE Transactions on Magnetics, 2023
32023
FinFET Fin-Trimming During Replacement Metal Gate for an Asymmetric Device Toward STT MRAM Performance Enhancement
R Singh, S Verma, S Mittal
IEEE Transactions on Electron Devices 69 (12), 6699-6704, 2022
32022
Next generation 3-D spin transfer torque magneto-resistive random access memories
BK Kaushik, S Verma, AA Kulkarni, S Prajapati, BK Kaushik, S Verma, ...
Next Generation Spin Torque Memories, 13-34, 2017
22017
Magnetic Domain Wall Race Track Memory
BK Kaushik, S Verma, AA Kulkarni, S Prajapati, BK Kaushik, S Verma, ...
Next Generation Spin Torque Memories, 71-92, 2017
22017
Novel compact model for multi-level spin torque magnetic tunnel junctions
S Prajapati, S Verma, AA Kulkarni, BK Kaushik
Spintronics IX 9931, 84-92, 2016
22016
Design space exploration and power optimization of STT MRAM using trimmed fin Asymmetric FinFET
A Kumar, J Rajpoot, S Verma
Microelectronics Journal 149, 106238, 2024
12024
Emerging Memory Technologies
BK Kaushik, S Verma, AA Kulkarni, S Prajapati, BK Kaushik, S Verma, ...
Next Generation Spin Torque Memories, 1-12, 2017
12017
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