Roberto Bergamaschini
Roberto Bergamaschini
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Scaling hetero-epitaxy from layers to three-dimensional crystals
CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ...
Science 335 (6074), 1330-1334, 2012
Faceting of equilibrium and metastable nanostructures: a phase-field model of surface diffusion tackling realistic shapes
M Salvalaglio, R Backofen, R Bergamaschini, F Montalenti, A Voigt
Crystal Growth & Design 15 (6), 2787-2794, 2015
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays
R Bergamaschini, F Isa, CV Falub, P Niedermann, E Müller, G Isella, ...
Surface science reports 68 (3-4), 390-417, 2013
Ge crystals on Si show their light
F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ...
Physical Review Applied 1 (4), 044005, 2014
Continuum modelling of semiconductor heteroepitaxy: an applied perspective
R Bergamaschini, M Salvalaglio, R Backofen, A Voigt, F Montalenti
Advances in Physics: X 1 (3), 331-367, 2016
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ...
Physical Review Materials 2 (9), 093404, 2018
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
M Albani, S Assali, MA Verheijen, S Koelling, R Bergamaschini, F Pezzoli, ...
Nanoscale 10 (15), 7250-7256, 2018
Anomalous smoothing preceding island formation during growth on patterned substrates
R Bergamaschini, J Tersoff, Y Tu, JJ Zhang, G Bauer, F Montalenti
Physical review letters 109 (15), 156101, 2012
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
Competition between kinetics and thermodynamics during the growth of faceted crystal by phase field modeling
M Albani, R Bergamaschini, M Salvalaglio, A Voigt, L Miglio, F Montalenti
physica status solidi (b) 256 (7), 1800518, 2019
Strain engineering in Ge/GeSn core/shell nanowires
S Assali, M Albani, R Bergamaschini, MA Verheijen, A Li, S Kölling, ...
Applied Physics Letters 115 (11), 2019
Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires
S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ...
ACS nano 14 (2), 2445-2455, 2020
Dislocation-Free SiGe/Si Heterostructures
F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ...
Crystals 8 (6), 257, 2018
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
M Salvalaglio, R Bergamaschini, R Backofen, A Voigt, F Montalenti, ...
Applied Surface Science 391, 33-38, 2017
3D heteroepitaxy of mismatched semiconductors on silicon
CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ...
Thin Solid Films 557, 42-49, 2014
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films
F Rovaris, R Bergamaschini, F Montalenti
Physical Review B 94 (20), 205304, 2016
Dynamics of pit filling in heteroepitaxy via phase-field simulations
M Albani, R Bergamaschini, F Montalenti
Physical Review B 94 (7), 075303, 2016
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si (001)
R Bergamaschini, M Brehm, M Grydlik, T Fromherz, G Bauer, F Montalenti
Nanotechnology 22 (28), 285704, 2011
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ...
ECS Transactions 64 (6), 631, 2014
Selective area epitaxy of GaAs/Ge/Si nanomembranes: a morphological study
M Bollani, A Fedorov, M Albani, S Bietti, R Bergamaschini, F Montalenti, ...
Crystals 10 (2), 57, 2020
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