Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ...
Applied Physics Letters 113 (21), 2018
85 2018 Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness T Mimura, T Shimizu, H Funakubo
Applied Physics Letters 115 (3), 2019
77 2019 Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo
Applied Physics Letters 113 (10), 2018
58 2018 Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials 32 (9), 2108876, 2022
46 2022 Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film T Mimura, T Shimizu, T Kiguchi, A Akama, TJ Konno, Y Katsuya, O Sakata, ...
Japanese Journal of Applied Physics 58 (SB), SBBB09, 2019
42 2019 Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films SS Fields, T Cai, ST Jaszewski, A Salanova, T Mimura, HH Heinrich, ...
Advanced Electronic Materials 8 (12), 2200601, 2022
40 2022 Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3 ) K Aryana, JA Tomko, R Gao, ER Hoglund, T Mimura, S Makarem, ...
Nature communications 13 (1), 1573, 2022
40 2022 Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films Y Tashiro, T Shimizu, T Mimura, H Funakubo
ACS Applied Electronic Materials 3 (7), 3123-3130, 2021
40 2021 Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method T Mimura, T Shimizu, H Uchida, H Funakubo
Applied Physics Letters 116 (6), 2020
38 2020 Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing T Mimura, K Katayama, T Shimizu, H Uchida, T Kiguchi, A Akama, ...
Applied Physics Letters 109 (5), 2016
38 2016 Thickness-and orientation-dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films T Mimura, T Shimizu, Y Katsuya, O Sakata, H Funakubo
Japanese Journal of Applied Physics 59 (SG), SGGB04, 2020
31 2020 Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5 Zr0.5 O2 : Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase T Shimizu, Y Tashiro, T Mimura, T Kiguchi, T Shiraishi, TJ Konnno, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000589, 2021
30 2021 Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films T Mimura, T Shimizu, O Sakata, H Funakubo
Applied Physics Letters 118 (11), 2021
30 2021 Ferroelectricity in hafnia controlled via surface electrochemical state KP Kelley, AN Morozovska, EA Eliseev, Y Liu, SS Fields, ST Jaszewski, ...
Nature Materials 22 (9), 1144-1151, 2023
28 2023 Wake-up and fatigue mechanisms in ferroelectric Hf0. 5Zr0. 5O2 films with symmetric RuO2 electrodes SS Fields, SW Smith, ST Jaszewski, T Mimura, DA Dickie, G Esteves, ...
Journal of Applied Physics 130 (13), 2021
27 2021 Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering T Suzuki, T Shimizu, T Mimura, H Uchida, H Funakubo
Japanese Journal of Applied Physics 57 (11S), 11UF15, 2018
24 2018 Thickness dependence of phase stability in epitaxial T Mimura, T Shimizu, O Sakata, H Funakubo
Physical Review Materials 5 (11), 114407, 2021
21 2021 Preparation of near-1-µm-thick {100}-oriented epitaxial Y-doped HfO2 ferroelectric films on (100) Si substrates by a radio-frequency magnetron sputtering method R Shimura, T Mimura, T Shimizu, Y Tanaka, Y Inoue, H Funakubo
Journal of the Ceramic Society of Japan 128 (8), 539-543, 2020
20 2020 Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111) Pt/TiO x/SiO2/(001) Si substrates by a sputtering method and their ferroelectric and piezoelectric properties R Shimura, T Mimura, A Tateyama, T Shimizu, T Yamada, Y Tanaka, ...
Japanese Journal of Applied Physics 60 (3), 031009, 2021
15 2021 Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films JF Ihlefeld, T Peters, ST Jaszewski, T Mimura, BL Aronson, ...
Applied Physics Letters 123 (8), 2023
8 2023 