Curt A Richter
Curt A Richter
Leader, Quantum Transport Project, National Institute of Standards and Technology
Verified email at
Cited by
Cited by
Toward clean and crackless transfer of graphene
X Liang, BA Sperling, I Calizo, G Cheng, CA Hacker, Q Zhang, Y Obeng, ...
ACS nano 5 (11), 9144-9153, 2011
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
DJ Gundlach, JE Royer, SK Park, S Subramanian, OD Jurchescu, ...
Nature Materials 7 (3), 216-221, 2008
A flexible solution-processed memristor
N Gergel-Hackett, B Hamadani, B Dunlap, J Suehle, C Richter, C Hacker, ...
IEEE Electron Device Letters 30 (7), 706-708, 2009
Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed
DM DeLongchamp, BM Vogel, Y Jung, MC Gurau, CA Richter, OA Kirillov, ...
Chemistry of materials 17 (23), 5610-5612, 2005
New resistivity for high-mobility quantum Hall conductors
PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64 (17), 2062, 1990
New resistivity for high-mobility quantum Hall conductors
PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64, 2062, 1990
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 2012
Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties
YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee
Applied physics letters 80 (7), 1249-1251, 2002
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel
Nanotechnology 16 (9), 1482, 2005
Enhanced channel modulation in dual-gated silicon nanowire transistors
SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel
Nano letters 5 (12), 2519-2523, 2005
Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ...
Applied Physics Letters 102 (18), 2013
Broadband optical properties of large-area monolayer CVD molybdenum disulfide
W Li, AG Birdwell, M Amani, RA Burke, X Ling, YH Lee, X Liang, L Peng, ...
Physical Review B 90 (19), 195434, 2014
Controllable, wide‐ranging n‐doping and p‐doping of monolayer group 6 transition‐metal disulfides and diselenides
S Zhang, HM Hill, K Moudgil, CA Richter, AR Hight Walker, S Barlow, ...
Advanced Materials 30 (36), 1802991, 2018
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics
EM Vogel, WK Henson, CA Richter, JS Suehle
IEEE Transactions on Electron Devices 47 (3), 601-608, 2000
Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ...
ACS applied materials & interfaces 7 (2), 1180-1187, 2015
Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ...
Scientific reports 3 (1), 1757, 2013
High inversion current in silicon nanowire field effect transistors
SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich
Nano Letters 4 (11), 2197-2201, 2004
Influence of a water rinse on the structure and properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) films
DM DeLongchamp, BD Vogt, CM Brooks, K Kano, J Obrzut, CA Richter, ...
Langmuir 21 (24), 11480-11483, 2005
A comparison of quantum-mechanical capacitance-voltage simulators
CA Richter, AR Hefner, EM Vogel
IEEE Electron Device Letters 22 (1), 35-37, 2001
Comparison of Si− O− C Interfacial Bonding of Alcohols and Aldehydes on Si (111) Formed from Dilute Solution with Ultraviolet Irradiation
CA Hacker, KA Anderson, LJ Richter, CA Richter
Langmuir 21 (3), 882-889, 2005
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