Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ...
Applied Physics Letters 99 (11), 2011
385 2011 Thermal conductivity in strain symmetrized Si/Ge superlattices on Si (111) S Chakraborty, CA Kleint, A Heinrich, CM Schneider, J Schumann, ...
Applied Physics Letters 83 (20), 4184-4186, 2003
117 2003 Investigations of field-evaporated end forms in voltage-and laser-pulsed atom probe tomography A Shariq, S Mutas, K Wedderhoff, C Klein, H Hortenbach, S Teichert, ...
Ultramicroscopy 109 (5), 472-479, 2009
85 2009 Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x) AlxO2 films W Weinreich, R Reiche, M Lemberger, G Jegert, J Müller, L Wilde, ...
Microelectronic engineering 86 (7-9), 1826-1829, 2009
77 2009 Atomic Structure of a U Falke, A Bleloch, M Falke, S Teichert
Physical review letters 92 (11), 116103, 2004
62 2004 Growth of MnSi1. 7 on Si (0 0 1) by MBE S Teichert, S Schwendler, DK Sarkar, A Mogilatenko, M Falke, G Beddies, ...
Journal of crystal growth 227, 882-887, 2001
47 2001 Silver nanostructures formation in porous Si/SiO2 matrix V Sivakov, EY Kaniukov, AV Petrov, OV Korolik, AV Mazanik, ...
Journal of crystal growth 400, 21-26, 2014
44 2014 Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline M Lanza, M Porti, M Nafria, X Aymerich, G Benstetter, E Lodermeier, ...
IEEE transactions on nanotechnology 10 (2), 344-351, 2010
39 2010 Silver nanostructures evolution in porous SiO2/p-Si matrices for wide wavelength surface-enhanced Raman scattering applications D Yakimchuk, E Kaniukov, V Bundyukova, L Osminkina, S Teichert, ...
MRS communications 8 (1), 95-99, 2018
36 2018 S Monaghan, K Cherkaoui, É O'Connor, V Djara, PK Hurley, L Oberbeck, ...
IEEE electron device letters 30 (3), 219-221, 2009
34 2009 Application of the pattern matching approach for EBSD calibration and orientation mapping, utilising dynamical EBSP simulations T Friedrich, A Bochmann, J Dinger, S Teichert
Ultramicroscopy 184, 44-51, 2018
31 2018 Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices M Lanza, M Porti, M Nafria, X Aymerich, G Benstetter, E Lodermeier, ...
Microelectronic engineering 86 (7-9), 1921-1924, 2009
31 2009 Real structure of the CoSi2∕ Si (001) interface studied by dedicated aberration-corrected scanning transmission electron microscopy M Falke, U Falke, A Bleloch, S Teichert, G Beddies, HJ Hinneberg
Applied Physics Letters 86 (20), 2005
30 2005 Surfactant mediated growth of MnSi1. 7 on Si (001) S Teichert, H Hortenbach, HJ Hinneberg
Applied Physics Letters 78 (14), 1988-1990, 2001
29 2001 Sintering behavior, microstructure and thermoelectric properties of calcium cobaltite thick films for transversal thermoelectric multilayer generators T Schulz, T Reimann, A Bochmann, A Vogel, B Capraro, B Mieller, ...
Journal of the European Ceramic Society 38 (4), 1600-1607, 2018
27 2018 Properties of plasma-enhanced atomic layer deposition-grown tantalum carbonitride thin films C Hossbach, S Teichert, J Thomas, L Wilde, H Wojcik, D Schmidt, ...
Journal of The Electrochemical Society 156 (11), H852, 2009
26 2009 Interband optical properties of higher manganese silicide thin films M Rebien, W Henrion, H Angermann, S Teichert
Applied physics letters 81 (4), 649-651, 2002
25 2002 Preparation and properties of MnSi1. 7 on Si (001) S Teichert, DK Sarkar, S Schwendler, H Giesler, A Mogilatenko, M Falke, ...
Microelectronic engineering 55 (1-4), 227-232, 2001
25 2001 Optical interband properties of some semiconducting silicides H Lange, W Henrion, F Fenske, T Zettler, J Schumann, S Teichert
physica status solidi (b) 194 (1), 231-240, 1996
25 1996 An oxide-based thermoelectric generator: Transversal thermoelectric strip-device S Teichert, A Bochmann, T Reimann, T Schulz, C Dreßler, J Töpfer
AIP Advances 5 (7), 2015
21 2015 