Ya-Hong Xie
Ya-Hong Xie
University of California Los Angeles, Materials Sciences & Engineering
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Cited by
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Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ...
Journal of applied physics 70 (5), 2672-2678, 1991
Light emission from silicon
SS Iyer, YH Xie
Science 260 (5104), 40-46, 1993
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ...
Physical Review B 52 (7), 4910, 1995
Luminescence and structural study of porous silicon films
YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ...
Journal of applied physics 71 (5), 2403-2407, 1992
Dimensions of luminescent oxidized and porous silicon structures
S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ...
Physical review letters 72 (16), 2648, 1994
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied Physics Letters 59 (13), 1611-1613, 1991
Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain
YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ...
Physical Review Letters 73 (22), 3006, 1994
Very high mobility two‐dimensional hole gas in Si/GexSi1− x/Ge structures grown by molecular beam epitaxy
YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson
Applied physics letters 63 (16), 2263-2264, 1993
Surface morphology of related GexSi1−x films
JWP Hsu, EA Fitzgerald, YH Xie, PJ Silverman, MJ Cardillo
Applied physics letters 61 (11), 1293-1295, 1992
Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection
P Wang, O Liang, W Zhang, T Schroeder, YH Xie
Advanced Materials 25 (35), 4918-4924, 2013
Semiconductor heterostructure devices with strained semiconductor layers
D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie
US Patent 5,442,205, 1995
Vertical graphene base transistor
W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure
P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie
Analytical chemistry 87 (20), 10255-10261, 2015
Relaxed template for fabricating regularly distributed quantum dot arrays
YH Xie, SB Samavedam, M Bulsara, TA Langdo, EA Fitzgerald
Applied physics letters 71 (24), 3567-3568, 1997
Absorption and luminescence studies of free-standing porous silicon films
YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ...
Physical Review B 49 (8), 5386, 1994
Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors
W Liu, BL Jackson, J Zhu, CQ Miao, CH Chung, YJ Park, K Sun, J Woo, ...
Acs Nano 4 (7), 3927-3932, 2010
Na-Doped p-Type ZnO Microwires
W Liu, F Xiu, K Sun, YH Xie, KL Wang, Y Wang, J Zou, Z Yang, J Liu
Journal of the American Chemical Society 132 (8), 2498-2499, 2010
Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures
D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
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