CsPbBr3 Quantum Dots 2.0: Benzenesulfonic Acid Equivalent Ligand Awakens Complete Purification D Yang, X Li, W Zhou, S Zhang, C Meng, Y Wu, Y Wang, H Zeng
Advanced Materials 31 (30), 1900767, 2019
402 2019 Antimonene oxides: emerging tunable direct bandgap semiconductor and novel topological insulator S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng
Nano letters 17 (6), 3434-3440, 2017
295 2017 Ultrathin bismuth nanosheets for stable Na-ion batteries: clarification of structure and phase transition by in situ observation Y Huang, C Zhu, S Zhang, X Hu, K Zhang, W Zhou, S Guo, F Xu, H Zeng
Nano Letters 19 (2), 1118-1123, 2019
142 2019 Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications Z Hu, Y Ding, X Hu, W Zhou, X Yu, S Zhang
Nanotechnology 30 (25), 252001, 2019
137 2019 Two-dimensional GeS with tunable electronic properties via external electric field and strain S Zhang, N Wang, S Liu, S Huang, W Zhou, B Cai, M Xie, Q Yang, X Chen, ...
Nanotechnology 27 (27), 274001, 2016
120 2016 Two-dimensional SiP: an unexplored direct band-gap semiconductor S Zhang, S Guo, Y Huang, Z Zhu, B Cai, M Xie, W Zhou, H Zeng
2D Materials 4 (1), 015030, 2016
104 2016 Modulating epitaxial atomic structure of antimonene through interface design T Niu, W Zhou, D Zhou, X Hu, S Zhang, K Zhang, M Zhou, H Fuchs, ...
Advanced Materials 31 (29), 1902606, 2019
94 2019 Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional W Zhou, S Zhang, S Guo, Y Wang, J Lu, X Ming, Z Li, H Qu, H Zeng
Physical Review Applied 13 (4), 044066, 2020
88 2020 Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy S Guo, Z Zhu, X Hu, W Zhou, X Song, S Zhang, K Zhang, H Zeng
Nanoscale 10 (18), 8397-8403, 2018
85 2018 Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets W Zhou, S Zhang, Y Wang, S Guo, H Qu, P Bai, Z Li, H Zeng
Advanced Electronic Materials 6 (3), 1901281, 2020
79 2020 A class of Pb-free double perovskite halide semiconductors with intrinsic ferromagnetism, large spin splitting and high Curie temperature B Cai, X Chen, M Xie, S Zhang, X Liu, J Yang, W Zhou, S Guo, H Zeng
Materials Horizons 5 (5), 961-968, 2018
71 2018 First-principles study of SO2 sensors based on phosphorene and its isoelectronic counterparts: GeS, GeSe, SnS, SnSe S Guo, L Yuan, X Liu, W Zhou, X Song, S Zhang
Chemical Physics Letters 686, 83-87, 2017
61 2017 A highly sensitive and selective SnS2 monolayer sensor in detecting SF6 decomposition gas S Guo, X Hu, Y Huang, W Zhou, H Qu, L Xu, X Song, S Zhang, H Zeng
Applied Surface Science 541, 148494, 2021
52 2021 Two-dimensional pnictogen for field-effect transistors W Zhou, J Chen, P Bai, S Guo, S Zhang, X Song, L Tao, H Zeng
Research, 2019
46 2019 Mechanistic understanding of two-dimensional phosphorus, arsenic, and antimony high-capacity anodes for fast-charging lithium/sodium ion batteries S Guo, X Hu, W Zhou, X Liu, Y Gao, S Zhang, K Zhang, Z Zhu, H Zeng
The Journal of Physical Chemistry C 122 (51), 29559-29566, 2018
45 2018 DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl W Zhou, S Guo, S Zhang, Z Zhu, X Song, T Niu, K Zhang, X Liu, Y Zou, ...
Nanoscale 10 (7), 3350-3355, 2018
41 2018 Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport H Qu, S Guo, W Zhou, S Zhang
IEEE Electron Device Letters 42 (1), 66-69, 2020
38 2020 Layer-controlled band alignment, work function and optical properties of few-layer GeSe X Song, W Zhou, X Liu, Y Gu, S Zhang
Physica B: Condensed Matter 519, 90-94, 2017
32 2017 High-Performance and Low-Power Transistors Based on Anisotropic Monolayer β - S Guo, H Qu, W Zhou, SA Yang, YS Ang, J Lu, H Zeng, S Zhang
Physical Review Applied 17 (6), 064010, 2022
29 2022 Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3 J Li, W Zhou, L Xu, J Yang, H Qu, T Guo, B Xu, S Zhang, H Zeng
Materials Today Physics 26, 100749, 2022
28 2022 