| Optical and electrical properties of NiO for possible dielectric applications A Venter, JR Botha South African Journal of Science 107 (1), 1-6, 2011 | 88 | 2011 |
| Treatment for GaSb surfaces using a sulphur blended (NH4) 2S/(NH4) 2SO4 solution DM Murape, N Eassa, JH Neethling, R Betz, E Coetsee, HC Swart, ... Applied surface science 258 (18), 6753-6758, 2012 | 28 | 2012 |
| Optical and electrical characteristics of ZnO/Si heterojunction ZN Urgessa, SR Dobson, K Talla, DM Murape, A Venter, JR Botha Physica B: Condensed Matter 439, 149-152, 2014 | 16 | 2014 |
| Electrical properties of undoped and doped MOVPE-grown InAsSb T Krug, L Botha, P Shamba, TR Baisitse, A Venter, JAA Engelbrecht, ... Journal of crystal growth 298, 163-167, 2007 | 16 | 2007 |
| The effect of filament temperature on the growth of diamond using hot-filament chemical vapour deposition A Venter, JH Neethling Diamond and Related Materials 3 (1-2), 168-172, 1994 | 13 | 1994 |
| Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements A Venter, DM Murape, JR Botha, FD Auret Thin Solid Films 574, 32-37, 2015 | 11 | 2015 |
| Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment C Nyamhere, JR Botha, A Venter Physica B: Condensed Matter 406 (11), 2273-2276, 2011 | 10 | 2011 |
| Growth and electrical characterization of Zn-doped InAs and InAs1− xSbx A Venter, P Shamba, L Botha, JR Botha Thin Solid Films 517 (15), 4468-4473, 2009 | 10 | 2009 |
| Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition J Bollmann, A Venter Physica B: Condensed Matter 535, 237-241, 2018 | 9 | 2018 |
| Chalcogen based treatment of InAs with [(NH4) 2S/(NH4) 2SO4] N Eassa, DM Murape, JH Neethling, R Betz, E Coetsee, HC Swart, ... Surface science 605 (11-12), 994-999, 2011 | 9 | 2011 |
| Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements SRT Djiokap, ZN Urgessa, CM Mbulanga, A Venter, JR Botha Physica B: Condensed Matter 480, 68-71, 2016 | 8 | 2016 |
| Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis H Kumarakuru, ZN Urgessa, EJ Olivier, JR Botha, A Venter, JH Neethling Journal of alloys and compounds 612, 154-162, 2014 | 8 | 2014 |
| Inductively coupled plasma induced deep levels in epitaxial n-GaAs FD Auret, PJJ van Rensburg, WE Meyer, SMM Coelho, V Kolkovsky, ... Physica B: Condensed Matter 407 (10), 1497-1500, 2012 | 7 | 2012 |
| Surface morphology and electronic structure of halogen etched InAs (1 1 1) N Eassa, DM Murape, R Betz, JH Neethling, A Venter, JR Botha Physica B: Condensed Matter 407 (10), 1591-1594, 2012 | 6 | 2012 |
| Characterization of the E (0.31) defect introduced in bulk n-Ge by H or He plasma exposure C Nyamhere, A Venter, FD Auret, SMM Coelho, DM Murape Journal of Applied Physics 111 (4), 2012 | 6 | 2012 |
| Ar plasma induced deep levels in epitaxial n-GaAs A Venter, C Nyamhere, JR Botha, FD Auret, PJ Janse van Rensburg, ... Journal of Applied Physics 111 (1), 2012 | 6 | 2012 |
| Comprehensive study of ZnO nanostructures grown using chemical bath deposition: from growth to application ZN Urgessa, DM Murape, OS Oluwafemi, A Venter, M Wagner, JR Botha Smart Nano-Micro Materials and Devices 8204, 284-293, 2011 | 6 | 2011 |
| Improved GaSb surfaces using a (NH4) 2S/(NH4) 2S04 solution DM Murape, N Eassa, C Nyamhere, JH Neethling, R Betz, E Coetsee, ... Physica B: Condensed Matter 407 (10), 1675-1678, 2012 | 5 | 2012 |
| Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation C Nyamhere, AGM Das, FD Auret, A Chawanda, CA Pineda-Vargas, ... Physica B: Condensed Matter 406 (15-16), 3056-3059, 2011 | 5 | 2011 |
| dc-Hydrogen plasma induced defects in bulk n-Ge C Nyamhere, A Venter, DM Murape, FD Auret, SMM Coelho, JR Botha Physica B: Condensed Matter 407 (15), 2935-2938, 2012 | 4 | 2012 |
Johannes Reinhardt Bothaprofessor of physics, nelson mandela universityE-mail megerősítve itt: mandela.ac.za
