Nestoklon Mikhail
Nestoklon Mikhail
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Zitiert von
Zitiert von
Tight-binding calculations of image-charge effects in colloidal nanoscale platelets of CdSe
R Benchamekh, NA Gippius, J Even, MO Nestoklon, JM Jancu, S Ithurria, ...
Physical Review B 89 (3), 035307, 2014
Spin and valley-orbit splittings in Si Ge∕ Si heterostructures
MO Nestoklon, LE Golub, EL Ivchenko
Physical Review B 73 (23), 235334, 2006
Electric field effect on electron spin splitting in Si Ge∕ Si quantum wells
MO Nestoklon, EL Ivchenko, JM Jancu, P Voisin
Physical Review B 77 (15), 155328, 2008
Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces
SA Tarasenko, MV Durnev, MO Nestoklon, EL Ivchenko, JW Luo, ...
Physical Review B 91 (8), 081302, 2015
STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states
JM Jancu, JC Girard, MO Nestoklon, A Lemaître, F Glas, ZZ Wang, ...
Physical Review Letters 101 (19), 196801, 2008
Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point
GM Minkov, AV Germanenko, OE Rut, AA Sherstobitov, MO Nestoklon, ...
Physical Review B 93 (15), 155304, 2016
Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals
MO Nestoklon, SV Goupalov, RI Dzhioev, OS Ken, VL Korenev, ...
Phys. Rev. B 97, 235304, 2018
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
C Robert, C Cornet, P Turban, TN Thanh, MO Nestoklon, J Even, ...
Physical Review B 86 (20), 205316, 2012
Anomalous suppression of valley splittings in lead salt nanocrystals without inversion center
AN Poddubny, MO Nestoklon, SV Goupalov
Physical Review B 86 (3), 035324, 2012
Tuning Optical Properties of Ge Nanocrystals by Si Shell
MO Nestoklon, AN Poddubny, P Voisin, K Dohnalova
J. Phys. Chem. C 120 (33), 18901–18908, 2016
Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet
AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ...
Nano Letters 20 (1), 158-165, 2019
Virtual crystal description of III–V semiconductor alloys in the tight binding approach
MO Nestoklon, R Benchamekh, P Voisin
Journal of Physics: Condensed Matter 28 (30), 305801, 2016
Spin splitting of electron states in (110) quantum wells: Symmetry analysis and k· p theory versus microscopic calculations
MO Nestoklon, SA Tarasenko, JM Jancu, P Voisin
Physical Review B 85 (20), 205307, 2012
Weak localization of two-dimensional Dirac fermions beyond the diffusion regime
MO Nestoklon, NS Averkiev, SA Tarasenko
Solid state communications 151 (21), 1550-1553, 2011
Tensile-strained GaAs quantum wells and quantum dots in a Ga As x Sb 1− x matrix
AA Toropov, OG Lyublinskaya, BY Meltser, VA Solov’ev, AA Sitnikova, ...
Physical Review B 70 (20), 205314, 2004
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
E Kirstein, DR Yakovlev, MM Glazov, EA Zhukov, D Kudlacik, IV Kalitukha, ...
Nature Communications 13 (1), 3062, 2022
Band structure of silicene in the tight binding approximation
AV Gert, MO Nestoklon, IN Yassievich
Journal of Experimental and Theoretical Physics 121, 115-121, 2015
Lateral optical anisotropy of type-II interfaces in the tight-binding approach
EL Ivchenko, MO Nestoklon
Physical review B 70 (23), 235332, 2004
Optical transitions on a type II semiconductor interface in the empirical tight-binding theory
EL Ivchenko, MO Nestoklon
Journal of Experimental and Theoretical Physics 94, 644-653, 2002
Strain-induced fundamental optical transition in (In, Ga) As/GaP quantum dots
C Robert, MO Nestoklon, K Pereira da Silva, L Pedesseau, C Cornet, ...
Applied Physics Letters 104 (1), 011908, 2014
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