Jens W. Tomm
Jens W. Tomm
Senior Researcher at MBI berlin
E-mail megerősítve itt: mbi-berlin.de
Hivatkozott rá
Hivatkozott rá
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers
JW Tomm, M Ziegler, M Hempel, T Elsaesser
Laser & Photonics Reviews 5 (3), 422-441, 2011
Photoluminescence properties of ZnGa2O4: Mn powder phosphors
TK Tran, W Park, JW Tomm, BK Wagner, SM Jacobsen, CJ Summers, ...
Journal of applied physics 78 (9), 5691-5695, 1995
Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
R Klann, T Höfer, R Buhleier, T Elsaesser, JW Tomm
Journal of applied physics 77 (1), 277-286, 1995
Interdot carrier transfer in asymmetric bilayer InAs∕ GaAs quantum dot structures
YI Mazur, ZM Wang, GG Tarasov, M Xiao, GJ Salamo, JW Tomm, ...
Applied Physics Letters 86 (6), 2005
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
F Rinner, J Rogg, MT Kelemen, M Mikulla, G Weimann, JW Tomm, ...
Journal of applied physics 93 (3), 1848-1850, 2003
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
F Hatami, WT Masselink, L Schrottke, JW Tomm, V Talalaev, C Kristukat, ...
Physical Review B 67 (8), 085306, 2003
Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition
S Ma, H Li, J Hong, H Wang, X Lu, Y Chen, L Sun, F Yue, JW Tomm, ...
The journal of physical chemistry letters 10 (24), 7929-7936, 2019
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
GG Tarasov, YI Mazur, ZY Zhuchenko, A Maaßdorf, D Nickel, JW Tomm, ...
Journal of Applied Physics 88 (12), 7162-7170, 2000
Transient luminescence of dense InAs/GaAs quantum dot arrays
JW Tomm, T Elsaesser, YI Mazur, H Kissel, GG Tarasov, ZY Zhuchenko, ...
Physical Review B 67 (4), 045326, 2003
High-power broad-area diode lasers and laser bars
G Erbert, A Bärwolff, J Sebastian, J Tomm
High-Power Diode Lasers: Fundamentals, Technology, Applications: With …, 2000
Quantum-Well Laser Array Packaging: Nanoscale Pckaging Techniques
JW Tomm, J Jimenez
McGraw Hill Professional, 2007
Transient thermal behavior of high power diode laser arrays
R Puchert, A Barwolff, M Voß, U Menzel, JW Tomm, J Luft
IEEE Transactions on Components and Packaging Technologies 23 (1), 95-100, 2000
Optical and photoelectrical properties of oriented ZnO films
JW Tomm, B Ullrich, XG Qiu, Y Segawa, A Ohtomo, M Kawasaki, ...
Journal of Applied Physics 87 (4), 1844-1848, 2000
The dielectric function of PbS quantum dots in a glass matrix
I Moreels, D Kruschke, P Glas, JW Tomm
Optical Materials Express 2 (5), 496-500, 2012
Complementary thermoreflectance and micro-Raman analysis of facet temperatures of diode lasers
TJ Ochalski, D Pier¶cińska, K Pier¶ciński, M Bugajski, JW Tomm, ...
Applied physics letters 89 (7), 2006
Transient thermal properties of high-power diode laser bars
M Ziegler, F Weik, JW Tomm, T Elsaesser, W Nakwaski, RP Sarzała, ...
Applied physics letters 89 (26), 2006
Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
A Kozlowska, M Latoszek, JW Tomm, F Weik, T Elsaesser, M Zbroszczyk, ...
Applied Physics Letters 86 (20), 2005
Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots
YI Mazur, JW Tomm, V Petrov, GG Tarasov, H Kissel, C Walther, ...
Applied Physics Letters 78 (21), 3214-3216, 2001
Spectroscopic Analysis of optoelectronic semiconductors
J Jimenez, JW Tomm
Springer 202, 1-48, 2016
Aging properties of high power laser diode arrays analyzed by Fourier-transform photocurrent measurements
JW Tomm, A Jaeger, A Bärwolff, T Elsaesser, A Gerhardt, J Donecker
Applied physics letters 71 (16), 2233-2235, 1997
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