| Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors B Ku, Y Abbas, AS Sokolov, C Choi Journal of Alloys and Compounds 735, 1181-1188, 2018 | 101 | 2018 |
| Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device A Yawar, J Yu-Rim, S Andrey, Sergeevich, K Sohyeon, K Boncheol, ... Scientific Reports, 2018 | 101 | 2018 |
| The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 98 | 2020 |
| Silver‐adapted diffusive memristor based on organic nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) for artificial biosynapse applications AS Sokolov, M Ali, R Riaz, Y Abbas, MJ Ko, C Choi Advanced Functional Materials 29 (18), 1807504, 2019 | 97 | 2019 |
| 2D Ti3C2Tx MXene nanosheets coated cellulose fibers based 3D nanostructures for efficient water desalination S Anwer, DH Anjum, S Luo, Y Abbas, B Li, S Iqbal, K Liao Chemical Engineering Journal 406, 126827, 2021 | 92 | 2021 |
| Ex situ development and characterization of green antibacterial bacterial cellulose-based composites for potential biomedical applications A Fatima, S Yasir, M Ul-Islam, T Kamal, MW Ahmad, Y Abbas, S Manan, ... Advanced Composites and Hybrid Materials, 1-15, 2022 | 76 | 2022 |
| Towards engineering in memristors for emerging memory and neuromorphic computing: A review AS Sokolov, H Abbas, Y Abbas, C Choi Journal of Semiconductors 42 (1), 013101, 2021 | 61 | 2021 |
| Study of in situ silver migration in amorphous boron nitride CBRAM device YR Jeon, Y Abbas, AS Sokolov, S Kim, B Ku, C Choi ACS applied materials & interfaces 11 (26), 23329-23336, 2019 | 57 | 2019 |
| Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device S Kim, Y Abbas, YR Jeon, AS Sokolov, B Ku, C Choi Nanotechnology 29 (41), 8, 2018 | 54 | 2018 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 51 | 2020 |
| Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020 | 49 | 2020 |
| A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications H Abbas, Y Abbas, SN Truong, KS Min, MR Park, J Cho, TS Yoon, ... Semiconductor Science and Technology 32 (6), 065014, 2017 | 48 | 2017 |
| The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film Y Abbas, SR Dugasani, MT Raza, YR Jeon, SH Park, C Choi Nanotechnology 30 (33), 335203, 2019 | 39 | 2019 |
| Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices A Ali, Y Abbas, H Abbas, YR Jeon, S Hussain, BA Naqvi, C Choi, J Jung Applied Surface Science 525, 146390, 2020 | 35 | 2020 |
| Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing Yawar Abbas, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Sohyeon Kim, Boncheol ... Journal of Alloys and Compounds, 44-51, 2018 | 35 | 2018 |
| Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO 2 thin films for complementary and bipolar switching characteristics Y Abbas, RB Ambade, SB Ambade, TH Han, C Choi Nanoscale 11 (29), 13815-13823, 2019 | 34 | 2019 |
| Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices MR Park, Y Abbas, H Abbas, Q Hu, TS Lee, YJ Choi, TS Yoon, HH Lee, ... Microelectronic Engineering 159, 190-197, 2016 | 32 | 2016 |
| Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface B Ku, Y Abbas, S Kim, AS Sokolov, YR Jeon, C Choi Journal of Alloys and Compounds 797, 277-283, 2019 | 30 | 2019 |
| Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics Y Abbas, IS Han, AS Sokolov, YR Jeon, C Choi Journal of Materials Science: Materials in Electronics 31, 903-909, 2020 | 27 | 2020 |
| photodetection characteristics of Gold coated AfM tips and n-Silicon Substrate nano-Schottky interfaces Y Abbas, A Rezk, F Alkindi, I Saadat, A Nayfeh, M Rezeq Scientific reports 9 (1), 13586, 2019 | 25 | 2019 |
Changhwan ChoiHanyang University, Materials Science and EngineeringVerified email at hanyang.ac.kr
