Követés
Bruce Gnade
Bruce Gnade
E-mail megerősítve itt: smu.edu
Cím
Hivatkozott rá
Hivatkozott rá
Év
Mechanisms behind green photoluminescence in ZnO phosphor powders
K Vanheusden, WL Warren, CH Seager, DR Tallant, JA Voigt, BE Gnade
Journal of applied physics 79 (10), 7983-7990, 1996
44821996
Porous dielectric material with improved pore surface properties for electronics applications
CC Cho, BE Gnade, DM Smith
US Patent 5,504,042, 1996
5191996
Porous dielectric material with improved pore surface properties for electronics applications
CC Cho, BE Gnade, DM Smith, J Changming, WC Ackerman, ...
US Patent 6,140,252, 2000
4952000
Fabrication of Silver Vanadium Oxide and V2O5 Nanowires for Electrochromics
C Xiong, AE Aliev, B Gnade, KJ Balkus Jr
ACS nano 2 (2), 293-301, 2008
3212008
Cowpea mosaic virus as a scaffold for 3-D patterning of gold nanoparticles
AS Blum, CM Soto, CD Wilson, JD Cole, M Kim, B Gnade, A Chatterji, ...
Nano letters 4 (5), 867-870, 2004
2652004
Self-assembled monolayer coating for micro-mechanical devices
RM Wallace, DA Webb, BE Gnade
US Patent 5,523,878, 1996
1731996
FED up with fat tubes
BR Chalamala, Y Wei, BE Gnade
IEEE Spectrum 35 (4), 42-51, 1998
1681998
Exfoliated and intercalated polyamide-imide nanocomposites with montmorillonite
A Ranade, NA D'Souza, B Gnade
Polymer 43 (13), 3759-3766, 2002
1562002
A Non‐Doped Phosphorescent Organic Light‐Emitting Device with Above 31% External Quantum Efficiency
Q Wang, IWH Oswald, X Yang, G Zhou, H Jia, Q Qiao, Y Chen, ...
Advanced Materials 26 (48), 8107-8113, 2014
1482014
Method of making a semiconductor device using a low dielectric constant material
BE Gnade, CC Cho, DM Smith
US Patent 5,470,802, 1995
1461995
Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
S Govindarajan, TS Böscke, P Sivasubramani, PD Kirsch, BH Lee, ...
Applied Physics Letters 91 (6), 2007
1452007
Method for fabricating a DMD spatial light modulator with a hardened hinge
DA Webb, B Gnade
US Patent 5,504,614, 1996
1441996
Directed effusive beam atomic layer epitaxy system and method
RM Wallace, BE Gnade
US Patent 5,316,793, 1994
1371994
Optimization of poly (vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
D Mao, MA Quevedo-Lopez, H Stiegler, BE Gnade, HN Alshareef
Organic Electronics 11 (5), 925-932, 2010
1312010
Method of making an interconnect structure with an integrated low density dielectric
RH Havemann, S Jeng, BE Gnade, CC Cho
US Patent 5,488,015, 1996
1281996
High-Dielectric-Constant Material Electrodes Comprising Thin Platinum Layers
BEG S.R. Summerfelt, H.R. Beratan, P.S. Kirlin
US Patent 5,566,045, 1996
123*1996
Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films
BR Chalamala, Y Wei, RH Reuss, S Aggarwal, BE Gnade, R Ramesh, ...
Applied physics letters 74 (10), 1394-1396, 1999
1071999
The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg, Cd) Te
HF Schaake, JH Tregilgas, JD Beck, MA Kinch, BE Gnade
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (1 …, 1985
1051985
Anode plate for flat panel display having integrated getter
RM Wallace, JM Anthony, BE Gnade, CC Cho, TI Incorporated, V Patel
US Patent 5,689,151, 1997
991997
High-dielectric-constant material electrodes comprising thin platinum layers
SR Summerfelt, HR Beratan, PS Kirlin, BE Gnade
US Patent 5,581,436, 1996
981996
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