E A Fitzgerald
E A Fitzgerald
Cornell, ATT, MIT, Massachusetts Institute of Technology, NTU
Verified email at - Homepage
Cited by
Cited by
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
ML Lee, EA Fitzgerald, MT Bulsara, MT Currie, A Lochtefeld
Journal of applied physics 97 (1), 2005
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
MT Currie, SB Samavedam, TA Langdo, CW Leitz, EA Fitzgerald
Applied physics letters 72 (14), 1718-1720, 1998
Dislocations in strained-layer epitaxy: theory, experiment, and applications
EA Fitzgerald
Materials science reports 7 (3), 87-142, 1991
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
Coherent phonon heat conduction in superlattices
MN Luckyanova, J Garg, K Esfarjani, A Jandl, MT Bulsara, AJ Schmidt, ...
Science 338 (6109), 936-939, 2012
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ...
Journal of applied physics 70 (5), 2672-2678, 1991
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ...
Nature 544 (7650), 340-343, 2017
Strained-semiconductor-on-insulator device structures
TA Langdo, MT Currie, R Hammond, AJ Lochtefeld, EA Fitzgerald
US Patent 6,995,430, 2006
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
M Currie, A Lochtefeld, R Hammond, E Fitzgerald
US Patent 6,831,292, 2004
Methods of forming strained-semiconductor-on-insulator finFET device structures
AJ Lochtefeld, TA Langdo, R Hammond, MT Currie, G Braithwaite, ...
US Patent 7,074,623, 2006
Luminescence and structural study of porous silicon films
YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ...
Journal of applied physics 71 (5), 2403-2407, 1992
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ...
Journal of Applied Physics 65 (6), 2220-2237, 1989
Strained silicon MOSFET technology
JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ...
Digest. International Electron Devices Meeting,, 23-26, 2002
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
ME Groenert, CW Leitz, AJ Pitera, V Yang, H Lee, RJ Ram, EA Fitzgerald
Journal of applied physics 93 (1), 362-367, 2003
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied Physics Letters 59 (13), 1611-1613, 1991
Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain
YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ...
Physical Review Letters 73 (22), 3006, 1994
Monolithically integrated light emitting devices
EA Fitzgerald
US Patent 7,535,089, 2009
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
MT Currie, CW Leitz, TA Langdo, G Taraschi, EA Fitzgerald, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
High quality Ge on Si by epitaxial necking
TA Langdo, CW Leitz, MT Currie, EA Fitzgerald, A Lochtefeld, ...
Applied Physics Letters 76 (25), 3700-3702, 2000
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