Ion‐induced amorphous and crystalline phase formation in Al/Ni, Al/Pd, and Al/Pt thin films LS Hung, M Nastasi, J Gyulai, JW Mayer
Applied Physics Letters 42 (8), 672-674, 1983
230 1983 Kinetics of TiSi2 formation by thin Ti films on Si LS Hung, J Gyulai, JW Mayer, SS Lau, MA Nicolet
Journal of applied physics 54 (9), 5076-5080, 1983
194 1983 Alloying Behavior of Au and Au–Ge on GaAs J Gyulai, JW Mayer, V Rodriguez, AYC Yu, HJ Gopen
Journal of Applied Physics 42 (9), 3578-3585, 1971
156 1971 Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques SS Lau, S Matteson, JW Mayer, P Revesz, J Gyulai, J Roth, TW Sigmon, ...
Applied Physics Letters 34 (1), 76-78, 1979
154 1979 Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide J Gyulai, JW Mayer, IV Mitchell, V Rodriguez
Applied Physics Letters 17 (8), 332-334, 1970
145 1970 Continuous carbon nanotube production in underwater AC electric arc LP Biró, ZE Horváth, L Szalmás, K Kertész, F Wéber, G Juhász, ...
Chemical physics letters 372 (3-4), 399-402, 2003
132 2003 He-vacancy interactions in Si and their influence on bubble formation and evolution V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini
Physical Review B 61 (2), 937, 2000
128 2000 Y-branching of single walled carbon nanotubes P Nagy, R Ehlich, LP Biro, J Gyulai
Applied Physics A 70, 481-483, 2000
127 2000 Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy P Petrik, LP Biró, M Fried, T Lohner, R Berger, C Schneider, J Gyulai, ...
Thin Solid Films 315 (1-2), 186-191, 1998
119 1998 Analysis of amorphous layers on silicon by backscattering and channeling effect measurements O Meyer, J Gyulai, JW Mayer
Surface Science 22 (2), 263-276, 1970
106 1970 Atomically resolved STM images of carbon nanotube defects produced by irradiation Z Osváth, G Vértesy, L Tapasztó, F Wéber, ZE Horváth, J Gyulai, LP Biró
Physical Review B—Condensed Matter and Materials Physics 72 (4), 045429, 2005
104 2005 Simulation of STM images of three-dimensional surfaces and comparison with experimental data: Carbon nanotubes GI Márk, LP Biró, J Gyulai
Physical Review B 58 (19), 12645, 1998
84 1998 Influence of Cu as an impurity in Al/Ti and Al/W thin‐film reactions I Krafcsik, J Gyulai, CJ Palmström, JW Mayer
Applied physics letters 43 (11), 1015-1017, 1983
83 1983 Ion Implantation in Semiconductors: Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied … I Ruge, J Graul
Springer Science & Business Media, 2012
75 2012 Scanning tunnelling microscopy (STM) imaging of carbon nanotubes LP Biró, J Gyulai, P Lambin, JB Nagy, S Lazarescu, GI Márk, A Fonseca, ...
Carbon 36 (5-6), 689-696, 1998
72 1998 Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition P Petrik, T Lohner, M Fried, LP Biró, NQ Khánh, J Gyulai, W Lehnert, ...
Journal of Applied Physics 87 (4), 1734-1742, 2000
67 2000 Catalyst traces and other impurities in chemically purified carbon nanotubes grown by CVD LP Biro, NQ Khanh, Z Vertesy, ZE Horvath, Z Osvath, A Koos, J Gyulai, ...
Materials Science and Engineering: C 19 (1-2), 9-13, 2002
66 2002 Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling‐Effect Measurements J Gyulai, O Meyer, JW Mayer, V Rodriguez
Journal of Applied Physics 42 (1), 451-456, 1971
65 1971 Ion implantation in semiconductors JW Mayer
1973 International Electron Devices Meeting, 3-5, 1973
54 1973 Crystal orientation dependence of residual disorder in As− implanted Si H Müller, WK Chu, J Gyulai, JW Mayer, TW Sigmon, TR Cass
Applied Physics Letters 26 (6), 292-294, 1975
50 1975