The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1165 | 2018 |
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control M Kuball Surface and Interface Analysis: An International Journal devoted to the …, 2001 | 472 | 2001 |
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy M Kuball, JM Hayes, MJ Uren, I Martin, JCH Birbeck, RS Balmer, ... IEEE Electron Device Letters 23 (1), 7-9, 2002 | 422 | 2002 |
Buffer design to minimize current collapse in GaN/AlGaN HFETs MJ Uren, J Moreke, M Kuball IEEE Transactions on Electron Devices 59 (12), 3327-3333, 2012 | 372 | 2012 |
Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices A Sarua, H Ji, KP Hilton, DJ Wallis, MJ Uren, T Martin, M Kuball IEEE Transactions on electron devices 54 (12), 3152-3158, 2007 | 361 | 2007 |
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures A Sarua, H Ji, M Kuball, MJ Uren, T Martin, KP Hilton, RS Balmer IEEE Transactions on Electron Devices 53 (10), 2438-2447, 2006 | 337 | 2006 |
“Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs MJ Uren, S Karboyan, I Chatterjee, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (7), 2826-2834, 2017 | 235 | 2017 |
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy M Kuball, S Rajasingam, A Sarua, MJ Uren, T Martin, BT Hughes, ... Applied physics letters 82 (1), 124-126, 2003 | 227 | 2003 |
A study of the phase diagram of (K, Na, Li) NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy N Klein, E Hollenstein, D Damjanovic, HJ Trodahl, N Setter, M Kuball Journal of Applied Physics 102 (1), 2007 | 221 | 2007 |
Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure A Manoi, JW Pomeroy, N Killat, M Kuball IEEE electron device letters 31 (12), 1395-1397, 2010 | 220 | 2010 |
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration C Yuan, J Li, L Lindsay, D Cherns, JW Pomeroy, S Liu, JH Edgar, ... Communications physics 2 (1), 43, 2019 | 202 | 2019 |
Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping JW Pomeroy, M Bernardoni, DC Dumka, DM Fanning, M Kuball Applied Physics Letters 104 (8), 2014 | 197 | 2014 |
Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications H Sun, RB Simon, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball Applied Physics Letters 106 (11), 2015 | 191 | 2015 |
Raman scattering studies on single-crystalline bulk AlN under high pressures M Kuball, JM Hayes, AD Prins, NWA Van Uden, DJ Dunstan, Y Shi, ... Applied physics letters 78 (6), 724-726, 2001 | 177 | 2001 |
Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ... IEEE electron device letters 28 (2), 86-89, 2007 | 173 | 2007 |
Integrated optical and electrical analysis: Identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress M Ťapajna, RJT Simms, Y Pei, UK Mishra, M Kuball IEEE Electron Device Letters 31 (7), 662-664, 2010 | 163 | 2010 |
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section M Silvestri, MJ Uren, M Kuball Applied Physics Letters 102 (7), 2013 | 160 | 2013 |
Intentionally carbon-doped AlGaN/GaN HEMTs: Necessity for vertical leakage paths MJ Uren, M Silvestri, M Cäsar, GAM Hurkx, JA Croon, J Šonský, M Kuball IEEE Electron Device Letters 35 (3), 327-329, 2014 | 155 | 2014 |
Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, ... Applied Physics Letters 81 (18), 3491-3493, 2002 | 155 | 2002 |
Recombination dynamics in InGaN quantum wells ES Jeon, V Kozlov, YK Song, A Vertikov, M Kuball, AV Nurmikko, H Liu, ... Applied physics letters 69 (27), 4194-4196, 1996 | 150 | 1996 |