Role of solvent in the shape-controlled synthesis of anisotropic colloidal nanostructures R Sathiyanarayanan, M Alimohammadi, Y Zhou, KA Fichthorn The Journal of Physical Chemistry C 115 (39), 18983-18990, 2011 | 40 | 2011 |
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs T Yamashita, S Mehta, VS Basker, R Southwick, A Kumar, ... 2015 Symposium on VLSI Technology (VLSI Technology), T154-T155, 2015 | 30 | 2015 |
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, KVRM Murali Journal of Applied Physics 114 (3), 2013 | 29 | 2013 |
Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies R Sathiyanarayanan, ABH Hamouda, A Pimpinelli, TL Einstein Physical Review B 83 (3), 035424, 2011 | 16 | 2011 |
Ab-initio calculations of interactions between Cu adatoms on Cu (1 1 0): Sensitivity of strong multi-site interactions to adatom relaxations R Sathiyanarayanan, TL Einstein Surface science 603 (16), 2387-2392, 2009 | 15 | 2009 |
Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent 9,583,486, 2017 | 14 | 2017 |
Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu (0 0 1) ABH Hamouda, R Sathiyanarayanan, A Pimpinelli, TL Einstein Physical Review B 83 (3), 035423, 2011 | 14 | 2011 |
Semiconductor device with a stoichiometric gradient M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ... US Patent 9,589,635, 2017 | 13 | 2017 |
Sensitivity of short-range trio interactions to lateral relaxation of adatoms: Challenges for detailed lattice-gas modeling R Sathiyanarayanan, TJ Stasevich, TL Einstein Surface science 602 (6), 1243-1249, 2008 | 13 | 2008 |
Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent App. 15/222,151, 2017 | 10 | 2017 |
Multisite interactions in lattice-gas models TL Einstein, R Sathiyanarayanan Nanophenomena at Surfaces: Fundamentals of Exotic Condensed Matter …, 2011 | 10 | 2011 |
Terrace-width distributions of touching steps: Modification of the fermion analogy with implications for measuring step-step interactions R Sathiyanarayanan, ABH Hamouda, TL Einstein Physical Review B 80 (15), 153415, 2009 | 9 | 2009 |
Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent 10,170,576, 2019 | 8 | 2019 |
Dielectric properties of Si3− ξGeξN4 and Si3− ξCξN4: A density functional study K Ulman, R Sathiyanarayanan, RK Pandey, KVRM Murali, S Narasimhan Journal of Applied Physics 113 (23), 2013 | 7 | 2013 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent 9,627,484, 2017 | 6 | 2017 |
Data processing M Bell, IIRA Hamilton, ND Sathaye, R Sathiyanarayanan US Patent 9,549,044, 2017 | 4 | 2017 |
Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study R Sathiyanarayanan, RK Pandey, KVRM Murali Journal of Applied Physics 117 (3), 2015 | 4 | 2015 |
Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics RG Southwick, R Sathiyanarayanan, M Bajaj, S Mehta, T Yamashita, ... 2014 IEEE International Reliability Physics Symposium, BD. 2.1-BD. 2.4, 2014 | 4 | 2014 |
Low thickness dependent work-function nMOS integration for metal gate PF Ma, S Ganguli, SC Chen, R Sathiyanarayanan, A Basu, L Dong, ... US Patent 10,608,097, 2020 | 3 | 2020 |
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology T Ando, T Yamashita, S Fan, I Ok, R Sathiyanarayanan, R Pandey, ... 2015 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2015 | 3 | 2015 |