Coherent oscillation of zone-folded phonon modes in GaAs-AlAs superlattices A Yamamoto, T Mishina, Y Masumoto, M Nakayama
Physical review letters 73 (5), 740, 1994
242 1994 Experimental verification of Förster energy transfer between semiconductor quantum dots DG Kim, S Okahara, M Nakayama, YG Shim
Physical Review B 78 (15), 153301, 2008
110 2008 Origin of the 4.1-eV luminescence in pure CsI scintillator H Nishimura, M Sakata, T Tsujimoto, M Nakayama
Physical Review B 51 (4), 2167, 1995
108 1995 Observation of coherent folded acoustic phonons propagating in a GaAs/AlAs superlattice by two-color pump-probe spectroscopy K Mizoguchi, M Hase, S Nakashima, M Nakayama
Physical Review B 60 (11), 8262, 1999
105 1999 Mono-and Bi-layer superlattices of GaAs and AlAs N Sano, H Kato, M Nakayama, S Chika, H Terauchi
Japanese journal of applied physics 23 (8A), L640, 1984
91 1984 Optical properties of high-quality ZnO thin films grown by a sputtering method T Shimomura, D Kim, M Nakayama
Journal of Luminescence 112 (1-4), 191-195, 2005
72 2005 Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition M Nakayama, H Ichida, H Nishimura
Journal of Physics: Condensed Matter 11 (39), 7653, 1999
70 1999 Polarization choices in exciton-biexciton system of GaAs quantum wells MN S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, A. Takeuchi
Physical Review B 55 (3), 1654, 1997
70 1997 Electroreflectance detection of resonant coupling between Wannier-Stark localization states in a GaAs/AlAs superlattice M Nakayama, I Tanaka, H Nishimura, K Kawashima, K Fujiwara
Physical Review B 44 (11), 5935, 1991
69 1991 Thermal-strain-induced splitting of heavy-and light-hole exciton energies in CuI thin films grown by vacuum evaporation D Kim, M Nakayama, O Kojima, I Tanaka, H Ichida, T Nakanishi, ...
Physical Review B 60 (19), 13879, 1999
67 1999 X‐ray study of misfit strain relaxation in lattice‐mismatched heterojunctions K Kamigaki, H Sakashita, H Kato, M Nakayama, N Sano, H Terauchi
Applied physics letters 49 (17), 1071-1073, 1986
65 1986 Photoluminescence study of Inx Al1−x As‐GaAs strained‐layer superlattices H Kato, N Iguchi, S Chika, M Nakayama, N Sano
Journal of applied physics 59 (2), 588-592, 1986
64 1986 Photoluminescence properties of GaAs/AlAs short-period superlattices M Nakayama, I Tanaka, I Kimura, H Nishimura
Japanese journal of applied physics 29 (1R), 41, 1990
58 1990 Evidence for formation of self‐trapped excitons in a β‐Ga2 O3 single crystal S Yamaoka, M Nakayama
physica status solidi (c) 13 (2‐3), 93-96, 2016
57 2016 Photoluminescence properties related to localized states in colloidal PbS quantum dots DG Kim, T Kuwabara, M Nakayama
Journal of luminescence 119, 214-218, 2006
55 2006 Γ-X mixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices M Nakayama, K Imazawa, K Suyama, I Tanaka, H Nishimura
Physical Review B 49 (19), 13564, 1994
55 1994 Strong enhancement of band-edge photoluminescence in CdS quantum dots prepared by a reverse-micelle method D Kim, M Miyamoto, T Mishima, M Nakayama
Journal of applied physics 98 (8), 2005
54 2005 Raman scattering from GaAs AlAs monolayer-controlled superlattices M Nakayama, K Kubota, H Kato, S Chika, N Sano
Solid state communications 53 (5), 493-495, 1985
53 1985 Initial process of photoluminescence dynamics of self-trapped excitons in a single crystal S Yamaoka, Y Furukawa, M Nakayama
Physical Review B 95 (9), 094304, 2017
52 2017 Hot excitons in CuCl and CuBr crystalline thin films grown by vacuum deposition M Nakayama, A Soumura, K Hamasaki, H Takeuchi, H Nishimura
Physical Review B 55 (15), 10099, 1997
52 1997