| Oxide bipolar electronics: materials, devices and circuits M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ... Journal of Physics D: Applied Physics 49 (21), 213001, 2016 | 99 | 2016 |
| Strain distribution in bent ZnO microwires CP Dietrich, M Lange, FJ Klüpfel, H Von Wenckstern, R Schmidt-Grund, ... Applied Physics Letters 98 (3), 2011 | 56 | 2011 |
| Comparison of ZnO-based JFET, MESFET, and MISFET FJ Klüpfel, FL Schein, M Lorenz, H Frenzel, H von Wenckstern, ... IEEE transactions on electron devices 60 (6), 1828-1833, 2013 | 33 | 2013 |
| All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4Gates FJ Klüpfel, A Holtz, FL Schein, H von Wenckstern, M Grundmann IEEE Transactions on Electron Devices 62 (12), 4004-4008, 2015 | 18 | 2015 |
| 3D simulation of silicon-based single-electron transistors FJ Klüpfel, P Pichler 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 16 | 2017 |
| Process variability—Technological challenge and design issue for nanoscale devices J Lorenz, E Bär, S Barraud, AR Brown, P Evanschitzky, F Klüpfel, L Wang Micromachines 10 (1), 6, 2018 | 14 | 2018 |
| Process Variability for Devices at and beyond the 7 nm Node JK Lorenz, A Asenov, E Baer, S Barraud, F Kluepfel, C Millar, M Nedjalkov ECS Journal of Solid State Science and Technology 7 (11), P595, 2018 | 14 | 2018 |
| Gate-and drain-lag effects in (Mg, Zn) O-based metal-semiconductor field-effect transistors FJ Klüpfel, A Lajn, H Frenzel, H von Wenckstern, M Grundmann Journal of Applied Physics 109 (7), 2011 | 13 | 2011 |
| Influence of quantum dot characteristics on the performance of hybrid SET-FET circuits E Amat, F Klüpfel, J Bausells, F Perez-Murano IEEE Transactions on Electron Devices 66 (10), 4461-4467, 2019 | 12 | 2019 |
| Low frequency noise of ZnO based metal-semiconductor field-effect transistors FJ Klüpfel, H von Wenckstern, M Grundmann Applied Physics Letters 106 (3), 2015 | 12 | 2015 |
| Ring oscillators based on ZnO channel JFETs and MESFETs FJ Klüpfel, H von Wenckstern, M Grundmann Advanced Electronic Materials 2 (7), 1500431, 2016 | 8 | 2016 |
| A compact model based on Bardeen’s transfer Hamiltonian formalism for silicon single Electron transistors FJ Klüpfel IEEE Access 7, 84053-84065, 2019 | 7 | 2019 |
| An iterative surface potential algorithm including interface traps for compact modeling of sic-mosfets M Albrecht, FJ Klüpfel, T Erlbacher IEEE Transactions on Electron Devices 67 (3), 855-862, 2020 | 5 | 2020 |
| Simulation of silicon-dot-based single-electron memory devices FJ Klüpfel, A Burenkov, J Lorenz 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 5 | 2016 |
| Transparent semiconducting oxides for active multi-electrode arrays FJ Klüpfel Dissertation, Leipzig, Universität Leipzig, 2015, 2015 | 3 | 2015 |
| Metal-semiconductor field-effect transistor and intgrated circuits based on ZnO and related oxides H Frenzel, M Lorenz, FL Schein, A Lajn, FJ Klupfel, T Diez, ... Handbook of Zinc Oxide and related Materials 2, 2013 | 3 | 2013 |
| Compact Model for a Silicon Single Electron Transistor in a Stacked Nanopillar-Implementations in HSPICE and EXCEL/VBA FJ Klüpfel, P Pichler | 2 | 2021 |
| Quantum dot location relevance into SET-FET circuits based on FinFET devices E Amat, A del Moral, J Bausells, F Perez-Murano, F Klüpfel 2018 Conference on Design of Circuits and Integrated Systems (DCIS), 1-5, 2018 | 2 | 2018 |
| From devices to circuits: modelling the performance of 5nm nanosheets AR Brown, L Wang, P Asenov, FJ Klüpfel, B Cheng, S Martinie, O Rozeau, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 1 | 2019 |
| Influence of sacrificial layer germanium content on stacked-nanowire FET performance FJ Klüpfel IEEE Access 7, 85855-85859, 2019 | 1 | 2019 |
