| Oxide electronics utilizing ultrafast metal-insulator transitions Z Yang, C Ko, S Ramanathan Annual Review of Materials Research 41, 337-367, 2011 | 1114 | 2011 |
| Ultra-thin perfect absorber employing a tunable phase change material MA Kats, D Sharma, J Lin, P Genevet, R Blanchard, Z Yang, ... Applied Physics Letters 101 (22), 2012 | 667 | 2012 |
| A correlated nickelate synaptic transistor J Shi, SD Ha, Y Zhou, F Schoofs, S Ramanathan Nature communications 4 (1), 2676, 2013 | 504 | 2013 |
| Strongly correlated perovskite fuel cells Y Zhou, X Guan, H Zhou, K Ramadoss, S Adam, H Liu, S Lee, J Shi, ... Nature 534 (7606), 231-234, 2016 | 436 | 2016 |
| Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat IEEE Electron Device Letters 23 (8), 473-475, 2002 | 432 | 2002 |
| Vanadium dioxide as a natural disordered metamaterial: perfect thermal emission and large broadband negative differential thermal emittance MA Kats, R Blanchard, S Zhang, P Genevet, C Ko, S Ramanathan, ... Physical Review X 3 (4), 041004, 2013 | 423 | 2013 |
| Adaptive oxide electronics: A review SD Ha, S Ramanathan Journal of applied physics 110 (7), 2011 | 391 | 2011 |
| Mott memory and neuromorphic devices Y Zhou, S Ramanathan Proceedings of the IEEE 103 (8), 1289-1310, 2015 | 361 | 2015 |
| Methods for bonding wafers using a metal interlayer S Ramanathan, R Chebiam, M Kobrinsky, V Dubin, S List US Patent App. 10/611,395, 2004 | 327 | 2004 |
| 3D integrated circuits using thick metal for backside connections and offset bumps S Ramanathan, SE Kim, PR Morrow US Patent 7,410,884, 2008 | 323 | 2008 |
| Voltage-triggered ultrafast phase transition in vanadium dioxide switches Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan IEEE Electron Device Letters 34 (2), 220-222, 2013 | 311 | 2013 |
| Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping J Shi, Y Zhou, S Ramanathan Nature communications 5 (1), 4860, 2014 | 273 | 2014 |
| Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2 DW Oh, C Ko, S Ramanathan, DG Cahill Applied Physics Letters 96 (15), 2010 | 255 | 2010 |
| Scalable nanostructured membranes for solid-oxide fuel cells M Tsuchiya, BK Lai, S Ramanathan Nature nanotechnology 6 (5), 282-286, 2011 | 245 | 2011 |
| Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology PR Morrow, CM Park, S Ramanathan, MJ Kobrinsky, M Harmes IEEE electron device letters 27 (5), 335-337, 2006 | 242 | 2006 |
| Active optical metasurfaces based on defect-engineered phase-transition materials J Rensberg, S Zhang, Y Zhou, AS McLeod, C Schwarz, M Goldflam, M Liu, ... Nano letters 16 (2), 1050-1055, 2016 | 239 | 2016 |
| Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material MA Kats, R Blanchard, P Genevet, Z Yang, MM Qazilbash, DN Basov, ... Optics letters 38 (3), 368-370, 2013 | 238 | 2013 |
| Metrology system and method for stacked wafer alignment T Eiles, S Ramanathan US Patent App. 11/123,698, 2006 | 238 | 2006 |
| Method to fill the gap between coupled wafers D Staines, GM Kloster, S Ramanathan US Patent 7,087,538, 2006 | 222 | 2006 |
| Stacked device underfill and a method of fabrication GM Kloster, MD Goodner, S Ramanathan, P Morrow US Patent 6,946,384, 2005 | 222 | 2005 |
