| Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices MTKM Sarua, Andrei, Ji H., Hilton K. P., Wallis D. J., Uren M. J. IEEE Transactions on Electron Devices [0018-9383] 54 (12), 3152, 2007 | 351* | 2007 |
| Dilute nitride semiconductors M Henini Elsevier ISBN 0-08-044502-0, 2005 | 311 | 2005 |
| Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ... IEEE electron device letters 28 (2), 86-89, 2007 | 167 | 2007 |
| Analysis of DC–RF dispersion in AlGaN/GaN HFETs using RF waveform engineering C Roff, J Benedikt, PJ Tasker, DJ Wallis, KP Hilton, JO Maclean, ... IEEE Transactions on Electron Devices 56 (1), 13-19, 2008 | 112 | 2008 |
| Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 30 (2), 103-106, 2008 | 98 | 2008 |
| Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 29 (5), 416-418, 2008 | 61 | 2008 |
| Control of short-channel effects in GaN/AlGaN HFETs MJ Uren, DG Hayes, RS Balmer, DJ Wallis, KP Hilton, JO Maclean, ... 2006 European Microwave Integrated Circuits Conference, 65-68, 2006 | 52 | 2006 |
| X-band GaN SPDT MMIC with over 25 watt linear power handling J Janssen, KP Hilton, JO Maclean, DJ Wallis, J Powell, M Uren, T Martin, ... 2008 European Microwave Integrated Circuit Conference, 190-193, 2008 | 33 | 2008 |
| Evidence for selective delocalization of N-pair states in dilute GaAs 1− x N x BA Weinstein, SR Stambach, TM Ritter, JO Maclean, DJ Wallis Physical Review B 68 (3), 035336, 2003 | 29 | 2003 |
| Nitrogen incorporation into GaAs (N), Al0. 3Ga0. 7As (N) and In0. 15Ga0. 85As (N) by chemical beam epitaxy (CBE) using 1, 1-dimethylhydrazine JO Maclean, DJ Wallis, T Martin, MR Houlton, AJ Simons Journal of crystal growth 231 (1-2), 31-40, 2001 | 17 | 2001 |
| Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements C Roff, P McGovern, J Benedikt, PJ Tasker, RS Balmer, DJ Wallis, ... 2006 European Microwave Integrated Circuits Conference, 43-45, 2006 | 16 | 2006 |
| High-performance InSb based quantum well field effect transistors for low-power dissipation applications T Ashley, MT Emeny, DG Hayes, KP Hilton, R Jefferies, JO Maclean, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 15 | 2009 |
| Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run RS Balmer, JM Heaton, JO Maclean, SG Ayling, JP Newey, M Houlton, ... Journal of lightwave technology 21 (1), 211, 2003 | 15 | 2003 |
| The UK National Quantum Technology Hub in Sensors and Metrology SPIE Europe - Quantum Optics, Ed. Jurgen Stuhler, Andrew J. Shields 9900 …, 2016 | 14* | 2016 |
| Laser Drilling of Microholes in Single Crystal Silicon Using Continuous Wave (CW) 1070 nm Fiber Lasers with Millisecond Pulse Widths. JO Maclean, JR Hodson, C Tangkijcharoenchai, S Al-Ojaili, S Rodsavas, ... Lasers in Engineering (Old City Publishing) 39, 53-65, 2018 | 10 | 2018 |
| The sputter deposition of cerium oxide thin films for superconducting electronics JM Owens, EJ Tarte, P Berghuis, RE Somekh IEEE Transactions on Applied Superconductivity 5 (2), 1657 - 1660, 1995 | 10 | 1995 |
| Stress and microstructure of diamond-like carbon from ion-beam decomposition of hydrocarbon precursors AM Jones, CJ Bedell, G Dearnaley, C Johnston, JM Owens Diamond and Related Materials 1 (5-6), 416-421, 1992 | 10 | 1992 |
| Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy JO Maclean, T Martin, MR Houlton, PDJ Calcott, SG Ayling, KP Hilton, ... Applied Physics Letters 80 (6), 914-916, 2002 | 6 | 2002 |
| Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE) RS Balmer, T Martin, MJ Kane, JO Maclean, TJ Whitaker, SG Ayling, ... Journal of Crystal Growth 209 (2-3), 486-491, 2000 | 6 | 2000 |
| isense: A technology platform for cold atom based quantum technologies K Bongs, J Malcolm, C Ramelloo, L Zhu, V Boyer, T Valenzuela, ... Quantum Information and Measurement, QTu3B. 1, 2014 | 5 | 2014 |
