Dynamics of solid thin-film dewetting in the silicon-on-insulator system E Bussmann, F Cheynis, F Leroy, P Müller, O Pierre-Louis
New Journal of Physics 13 (4), 043017, 2011
83 2011 Dewetting dynamics of silicon-on-insulator thin films F Cheynis, E Bussmann, F Leroy, T Passanante, P Müller
Physical review B 84 (24), 245439, 2011
71 2011 Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes E Bussmann, CC Williams
Review of scientific instruments 75 (2), 422-425, 2004
48 2004 Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface E Bussmann, CC Williams
Applied physics letters 88 (26), 2006
42 2006 Atomic precision advanced manufacturing for digital electronics DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
40 2020 Single-electron tunneling to insulator surfaces measured by frequency detection electrostatic force microscopy E Bussmann, DJ Kim, CC Williams
Applied physics letters 85 (13), 2538-2540, 2004
34 2004 All-optical lithography process for contacting nanometer precision donor devices DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 2017
29 2017 Scanning capacitance microscopy registration of buried atomic-precision donor devices E Bussmann, M Rudolph, GS Subramania, S Misra, SM Carr, E Langlois, ...
Nanotechnology 26 (8), 085701, 2015
27 2015 Atomic-precision advanced manufacturing for Si quantum computing E Bussmann, RE Butera, JHG Owen, JN Randall, SM Rinaldi, ...
MRS Bulletin 46, 607-615, 2021
25 2021 Stress effects on solid–state dewetting of nano–thin films F Cheynis, E Bussmann, F Leroy, T Passanante, P Müller
International journal of nanotechnology 9 (3-7), 396-411, 2012
23 2012 Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy E Bussmann, F Cheynis, F Leroy, P Müller
IOP Conference Series: Materials Science and Engineering 12 (1), 012016, 2010
23 2010 One-Dimensional Defect-Mediated Diffusion of Si Adatoms on the E Bussmann, S Bockenhauer, FJ Himpsel, BS Swartzentruber
Physical Review Letters 101 (26), 266101, 2008
23 2008 Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy E Bussmann, N Zheng, CC Williams
Applied Physics Letters 86 (16), 2005
22 2005 Method for making semi-conductor nanocrystals oriented along a predefined direction L Borowik, JC Barbe, E Bussmann, F Cheynis, F LeRoy, D Mariolle, ...
US Patent 8,697,548, 2014
20 2014 Method for making semi-conductor nanocrystals L Borowik, JC Barbe, E Bussmann, F Cheynis, F Leroy, D Mariolle, ...
US Patent 8,647,957, 2014
20 2014 Impact of incorporation kinetics on device fabrication with atomic precision JA Ivie, Q Campbell, JC Koepke, MI Brickson, PA Schultz, RP Muller, ...
Physical Review Applied 16 (5), 054037, 2021
18 * 2021 Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures DA Scrymgeour, A Baca, K Fishgrab, RJ Simonson, M Marshall, ...
Applied Surface Science 423, 1097-1102, 2017
17 2017 Semiconductor adiabatic qubits MS Carroll, W Witzel, NT Jacobson, A Ganti, AJ Landahl, M Lilly, ...
US Patent 9,530,873, 2016
17 2016 Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si (001) F Leroy, T Passanante, F Cheynis, S Curiotto, EB Bussmann, P Müller
Applied Physics Letters 108 (11), 2016
17 2016 Imaging of localized electronic states at a nonconducting surface by single-electron tunneling force microscopy EB Bussmann, N Zheng, CC Williams
Nano letters 6 (11), 2577-2580, 2006
17 2006 
Shashank MisraSandia National LaboratoriesE-mail megerősítve itt: sandia.gov
