| Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods M Conroy, VZ Zubialevich, H Li, N Petkov, JD Holmes, PJ Parbrook Journal of Materials Chemistry C 3 (2), 431-437, 2015 | 71 | 2015 |
| Luminescence and stimulated emission from GaN on silicon substrates heterostructures GP Yablonskii, EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AL Gurskii, ... physica status solidi (a) 192 (1), 54-59, 2002 | 46 | 2002 |
| Effect of surface and defect chemistry on the photocatalytic properties of intentionally defect-rich ZnO nanorod arrays J Kegel, VZ Zubialevich, M Schmidt, IM Povey, ME Pemble ACS applied materials & interfaces 10 (21), 17994-18004, 2018 | 35 | 2018 |
| Fully porous GaN p–n junction diodes fabricated by chemical vapor deposition OV Bilousov, JJ Carvajal, H Geaney, VZ Zubialevich, PJ Parbrook, ... ACS Applied Materials & Interfaces 6 (20), 17954-17964, 2014 | 34 | 2014 |
| Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD MD Smith, E Taylor, TC Sadler, VZ Zubialevich, K Lorenz, HN Li, ... Journal of Materials Chemistry C 2 (29), 5787-5792, 2014 | 31 | 2014 |
| Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges SN Alam, VZ Zubialevich, B Ghafary, PJ Parbrook Scientific Reports 10 (1), 16205, 2020 | 26 | 2020 |
| Ultra-high-density arrays of defect-free aln nanorods: A “space-filling” approach M Conroy, VZ Zubialevich, H Li, N Petkov, S O’Donoghue, JD Holmes, ... ACS nano 10 (2), 1988-1994, 2016 | 26 | 2016 |
| Single phase (112 2) AlN grown on (101 0) sapphire by metalorganic vapour phase epitaxy DV Dinh, M Conroy, VZ Zubialevich, N Petkov, JD Holmes, PJ Parbrook Journal of Crystal Growth 414, 94-99, 2015 | 26 | 2015 |
| Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm GP Yablonskii, EV Lutsenko, VN Pavlovskii, IP Marko, AL Gurskii, ... Applied Physics Letters 79 (13), 1953-1955, 2001 | 26 | 2001 |
| Gan nanowire Schottky barrier diodes G Sabui, VZ Zubialevich, M White, P Pampili, PJ Parbrook, M McLaren, ... IEEE Transactions on Electron Devices 64 (5), 2283-2290, 2017 | 21 | 2017 |
| Growth, Stimulated Emission, Photo‐and Electroluminescence of InGaN/GaN EL‐Test Heterostructures EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AI Stognij, AL Gurskii, ... physica status solidi (c), 272-275, 2003 | 21 | 2003 |
| Fabrication of p-type porous GaN on silicon and epitaxial GaN OV Bilousov, H Geaney, JJ Carvajal, VZ Zubialevich, PJ Parbrook, ... Applied Physics Letters 103 (11), 2013 | 20 | 2013 |
| Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well GP Murphy, JJ Gough, LJ Higgins, VD Karanikolas, KM Wilson, ... Nanotechnology 28 (11), 115401, 2017 | 18 | 2017 |
| Enhanced UV luminescence from InAlN quantum well structures using two temperature growth VZ Zubialevich, TC Sadler, DV Dinh, SN Alam, H Li, P Pampili, ... Journal of luminescence 155, 108-111, 2014 | 18 | 2014 |
| Luminescence and lasing in InGaN∕ GaN multiple quantum well heterostructures grown at different temperatures GP Yablonskii, VN Pavlovskii, EV Lutsenko, VZ Zubialevich, AL Gurskii, ... Applied physics letters 85 (22), 5158-5160, 2004 | 17 | 2004 |
| InAlN-based LEDs emitting in the near-UV region P Pampili, VZ Zubialevich, P Maaskant, M Akhter, B Corbett, PJ Parbrook Japanese Journal of Applied Physics 58 (SC), SCCB33, 2019 | 16 | 2019 |
| Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells S Finot, V Grenier, V Zubialevich, C Bougerol, P Pampili, J Eymery, ... Applied Physics Letters 117 (22), 2020 | 15 | 2020 |
| Strongly nonparabolic variation of the band gap in InxAl1− xN with low indium content VZ Zubialevich, DV Dinh, SN Alam, S Schulz, EP O’Reilly, PJ Parbrook Semiconductor Science and Technology 31 (2), 025006, 2015 | 15 | 2015 |
| Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD J Mena, JJ Carvajal, O Martínez, J Jiménez, VZ Zubialevich, PJ Parbrook, ... Nanotechnology 28 (37), 375701, 2017 | 12 | 2017 |
| Comparative study of polar and semipolar (112¯ 2) InGaN layers grown by metalorganic vapour phase epitaxy DV Dinh, F Oehler, VZ Zubialevich, MJ Kappers, SN Alam, M Caliebe, ... Journal of Applied Physics 116 (15), 2014 | 12 | 2014 |
Peter J ParbrookStokes Professor of Nitride Materials, University College CorkE-mail megerősítve itt: tyndall.ie
