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Alka Ingale
Alka Ingale
RRCAT,INDORE:INDIA
Bestätigte E-Mail-Adresse bei rrcat.gov.in
Titel
Zitiert von
Zitiert von
Jahr
Raman spectra of semiconductor nanoparticles: disorder-activated phonons
A Ingale, KC Rustagi
Physical Review B 58 (11), 7197, 1998
1251998
Swift heavy ion induced modification of C60 thin films
N Bajwa, K Dharamvir, VK Jindal, A Ingale, DK Avasthi, R Kumar, ...
Journal of applied physics 94 (1), 326-333, 2003
742003
Ultrafast optical generation of coherent phonons in CdTe 1− x Se x quantum dots
AV Bragas, C Aku-Leh, S Costantino, A Ingale, J Zhao, R Merlin
Physical Review B 69 (20), 205306, 2004
702004
Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy
S Mishra, A Ingale, UN Roy, A Gupta
Thin Solid Films 516 (1), 91-98, 2007
632007
Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si
VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ...
Journal of Crystal Growth 310 (15), 3428-3435, 2008
582008
Role of electron energy loss in modification of C60 thin films by swift heavy ions
N Bajwa, A Ingale, DK Avasthi, R Kumar, A Tripathi, K Dharamvir, ...
Journal of Applied Physics 104 (5), 2008
402008
Studies on MOVPE growth of GaP epitaxial layer on Si (0 0 1) substrate and effects of annealing
VK Dixit, T Ganguli, TK Sharma, R Kumar, S Porwal, V Shukla, A Ingale, ...
Journal of crystal growth 293 (1), 5-13, 2006
392006
Effect of heavy ion irradiation on C60
S Lotha, A Ingale, DK Avasthi, VK Mittal, S Mishra, KC Rustagi, A Gupta, ...
Solid state communications 111 (1), 55-60, 1999
381999
Raman and photoluminescence investigations of disorder in ZnSe films deposited on n-GaAs
T Ganguli, A Ingale
Physical Review B 60 (16), 11618, 1999
311999
Resonance Raman scattering in HgTe: TO-phonon and forbidden-LO-phonon cross section near the E 1 gap
A Ingale, ML Bansal, AP Roy
Physical Review B 40 (18), 12353, 1989
251989
On red-shift of UV photoluminescence with decreasing size of silicon nanoparticles embedded in SiO2 matrix grown by pulsed laser deposition
A Chaturvedi, MP Joshi, E Rani, A Ingale, AK Srivastava, LM Kukreja
Journal of luminescence 154, 178-184, 2014
242014
Structure dependent electronic sputtering of aC: H films by swift heavy ions
S Ghosh, DK Avasthi, T Som, A Tripathi, D Kabiraj, A Ingale, S Mishra, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
192002
Structural effect on electronic sputtering of hydrogenated amorphous carbon films
S Ghosh, A Ingale, T Som, D Kabiraj, A Tripathi, S Mishra, S Zhang, ...
Solid state communications 120 (11), 445-450, 2001
182001
Crystalline and band alignment properties of InAs/Ge (111) heterostructure
S Pal, SD Singh, VK Dixit, TK Sharma, R Kumar, AK Sinha, V Sathe, ...
Journal of Alloys and Compounds 646, 393-398, 2015
162015
Structural and particulate to bulk phase transformation of CdS film on annealing: a Raman spectroscopy study
AA Ingale, S Mishra, UN Roy, P Tiwari, LM Kukreja
Journal of Applied Physics 106 (8), 2009
162009
Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition
P Bhattacharya, TK Sharma, S Singh, A Ingale, LM Kukreja
Journal of crystal growth 236 (1-3), 5-9, 2002
162002
Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients
T Ganguli, M Vedvyas, P Bhattacharya, LM Kukreja, A Ingale, KP Adhi, ...
Thin Solid Films 388 (1-2), 189-194, 2001
162001
Anomalous mode in the Raman and ir spectra of mercury telluride
ML Bansal, A Ingale, AP Roy
Physical Review B 43 (9), 7020, 1991
161991
Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study
E Rani, AA Ingale, A Chaturvedi, C Kamal, DM Phase, MP Joshi, ...
Journal of Raman Spectroscopy 47 (4), 457-467, 2016
152016
Raman spectroscopy and atomic force microscopy study of interfacial polytypism in GaP/Ge (111) heterostructures
R Aggarwal, AA Ingale, VK Dixit
Applied Surface Science 427, 754-762, 2018
142018
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