Kyle M. McNicholas
Kyle M. McNicholas
MIT Lincoln Laboratory
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Zitiert von
Zitiert von
Black phosphorus flexible thin film transistors at gighertz frequencies
W Zhu, S Park, MN Yogeesh, KM McNicholas, SR Bank, D Akinwande
Nano letters 16 (4), 2301-2306, 2016
Dual-band moiré metasurface patches for multifunctional biomedical applications
Z Wu, G Kelp, MN Yogeesh, W Li, KM McNicholas, A Briggs, BB Rajeeva, ...
Nanoscale 8 (43), 18461-18468, 2016
Tunable Graphene Metasurfaces with Gradient Features by Self‐Assembly‐Based Moiré Nanosphere Lithography
Z Wu, W Li, MN Yogeesh, S Jung, AL Lee, K McNicholas, A Briggs, ...
Advanced Optical Materials 4 (12), 2035-2043, 2016
Optical identification of oxygen vacancy formation at SrTiO3–(Ba, Sr) TiO3 heterostructures
MM Rutkowski, K McNicholas, ZQ Zeng, F Tuomisto, LJ Brillson
Journal of Physics D: Applied Physics 47 (25), 255303, 2014
Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ...
Applied Physics Letters 106 (8), 2015
Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics
EM Krivoy, AP Vasudev, S Rahimi, RA Synowicki, KM McNicholas, ...
ACS Photonics 5 (8), 3051-3056, 2018
Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, KM McNicholas, SD Sifferman, VD Dasika, D Jung, ...
Applied Physics Letters 108 (18), 2016
Bowing of the band gap and spin-orbit splitting energy in BGaAs
R Kudrawiec, MP Polak, KM McNicholas, J Kopaczek, MA Wistey, ...
Materials Research Express 6 (12), 125913, 2020
Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ...
APL Materials 5 (9), 2017
Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system
MM Rutkowski, KM McNicholas, Z Zeng, LJ Brillson
Review of Scientific Instruments 84 (6), 2013
Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
RH El-Jaroudi, KM McNicholas, AF Briggs, SD Sifferman, L Nordin, ...
Applied Physics Letters 117 (2), 2020
Kinetically Limited Molecular Beam Epitaxy of BxGa1–xAs Alloys
KM McNicholas, RH El-Jaroudi, SR Bank
Crystal Growth & Design 21 (11), 6076-6082, 2021
Growth advancement of GaAs-based BGaInAs alloys emitting at 1.3 μm by molecular beam epitaxy
RH El-Jaroudi, KM McNicholas, HS Maczko, R Kudrawiec, SR Bank
Crystal Growth & Design 22 (6), 3753-3759, 2022
Deep level defect spectroscopies of complex oxide surfaces and interfaces
J Zhang, K McNicholas, S Balaz, ZQ Zeng, D Schlom, LJ Brillson
Journal of Vacuum Science & Technology A 39 (6), 2021
Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP
J Kopaczek, F Dybała, SJ Zelewski, N Sokołowski, W Żuraw, ...
Journal of Physics D: Applied Physics 55 (1), 015107, 2021
Improved MWIR LED arrays on Si substrates for scene projectors
SR Bank, KM McNicholas, RH El-Jaroudi, AK Rockwell, T Golding, ...
2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018
InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability
B Guo, M Schwartz, SH Kodati, KM McNicholas, H Jung, S Lee, ...
APL Photonics 8 (11), 2023
Boron alloys for GaAs-based 1.3 μm semiconductor lasers
RH El-Jaroudi, KM McNicholas, BA Bouslog, IE Olivares, RC White, ...
2019 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2019
Emerging epitaxial materials for coherent III-V (opto) electronic heterostructure devices
KM McNicholas
Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers
SD Sifferman, M Motyka, AF Briggs, KJ Underwood, KM McNicholas, ...
2018 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2018
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