Giovanni Capellini
Giovanni Capellini
Full Professor, Università Roma Tre and IHP Leibniz Institute for High Performance Microelectronics
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Applied Physics Letters 72 (24), 3175-3177, 1998
SiGe intermixing in Ge/Si (100) islands
G Capellini, M De Seta, F Evangelisti
Applied Physics Letters 78 (3), 303-305, 2001
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking
A Novack, M Gould, Y Yang, Z Xuan, M Streshinsky, Y Liu, G Capellini, ...
Optics express 21 (23), 28387-28393, 2013
Methods of incorporating germanium within CMOS process
LC Gunn III, G Capellini, MJ Rattier, TJ Pinguet
US Patent 6,887,773, 2005
Atomic force microscopy lithography as a nanodevice development technique
A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ...
Nanotechnology 10 (4), 458, 1999
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 2835, 2018
Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111)
F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio
Applied Physics Letters 76 (6), 682-684, 2000
Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2
M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ...
ACS nano 9 (12), 12246-12254, 2015
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process
G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
Germanium silicon heterostructure photodetectors
G Masini, LC Gunn III, G Capellini
US Patent 7,397,101, 2008
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure
M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti
Physical review letters 75 (18), 3352, 1995
GeSn/SiGeSn heterostructure and multi quantum well lasers
D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ...
ACS photonics 5 (11), 4628-4636, 2018
Germanium integrated CMOS wafer and method for manufacturing the same
LC Gunn III, G Capellini, G Masini
US Patent 7,262,117, 2007
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition
G Capellini, L Di Gaspare, F Evangelisti, E Palange
Applied Physics Letters 70 (4), 493-495, 1997
A four-channel, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetectors
G Masini, G Capellini, J Witzens, C Gunn
Optical Fiber Communication Conference, PDP31, 2007
Monolithically integrated high-speed CMOS photonic transceivers
T Pinguet, B Analui, E Balmater, D Guckenberger, M Harrison, ...
2008 5th IEEE international conference on group IV photonics, 362-364, 2008
High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process
G Masini, S Sahni, G Capellini, J Witzens, C Gunn
Adv. Opt. Technol 196572, 2008, 2008
Radiative recombination and optical gain spectra in biaxially strained -type germanium
M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini
Physical review B 87 (23), 235313, 2013
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20