Design rules for minimizing voltage losses in high-efficiency organic solar cells D Qian, Z Zheng, H Yao, W Tress, TR Hopper, S Chen, S Li, J Liu, S Chen, ...
Nature materials 17 (8), 703-709, 2018
765 2018 Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ...
Applied physics letters 75 (4), 501-503, 1999
322 1999 Electronic properties of ga (in) nas alloys IA Buyanova, WM Chen, B Monemar
Materials Research Society Internet Journal of Nitride Semiconductor …, 2001
238 2001 Direct determination of electron effective mass in GaNAs/GaAs quantum wells PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu
Applied Physics Letters 77 (12), 1843-1845, 2000
214 2000 Wide bandgap GaN-based semiconductors for spintronics SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
196 2004 ZnO doped with transition metal ions SJ Pearton, DP Norton, MP Ivill, AF Hebard, JM Zavada, WM Chen, ...
IEEE Transactions on electron devices 54 (5), 1040-1048, 2007
182 2007 Oxygen and zinc vacancies in as-grown ZnO single crystals XJ Wang, LS Vlasenko, SJ Pearton, WM Chen, IA Buyanova
Journal of Physics D: Applied Physics 42 (17), 175411, 2009
161 2009 Physics and applications of dilute nitrides I Buyanova, W Chen
CRC Press, 2004
141 2004 Influence of conduction-band nonparabolicity on electron confinement and effective mass in quantum wells S Tomić, EP O’Reilly, PJ Klar, H Grüning, W Heimbrodt, WM Chen, ...
Physical Review B 69 (24), 245305, 2004
134 2004 Time-resolved studies of photoluminescence in alloys: Evidence for indirect-direct band gap crossover IA Buyanova, G Pozina, JP Bergman, WM Chen, HP Xin, CW Tu
Applied physics letters 81 (1), 52-54, 2002
125 2002 Mechanism for rapid thermal annealing improvements in undoped structures grown by molecular beam epitaxy IA Buyanova, G Pozina, PN Hai, NQ Thinh, JP Bergman, WM Chen, ...
Applied Physics Letters 77 (15), 2325-2327, 2000
122 2000 Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor XJ Wang, IA Buyanova, F Zhao, D Lagarde, A Balocchi, X Marie, CW Tu, ...
Nature materials 8 (3), 198-202, 2009
113 2009 Ferromagnetism in transition-metal doped ZnO SJ Pearton, DP Norton, MP Ivill, AF Hebard, JM Zavada, WM Chen, ...
Journal of Electronic Materials 36, 462-471, 2007
109 2007 Type I band alignment in the quantum wells IA Buyanova, G Pozina, PN Hai, WM Chen, HP Xin, CW Tu
Physical Review B 63 (3), 033303, 2000
92 2000 Band gap properties of Zn1− xCdxO alloys grown by molecular-beam epitaxy XJ Wang, IA Buyanova, WM Chen, M Izadifard, S Rawal, DP Norton, ...
Applied Physics Letters 89 (15), 2006
91 2006 Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures IA Buyanova, WM Chen, B Monemar, HP Xin, CW Tu
Applied Physics Letters 75 (24), 3781-3783, 1999
87 1999 Radiative recombination mechanism in alloys IA Buyanova, GY Rudko, WM Chen, HP Xin, CW Tu
Applied physics letters 80 (10), 1740-1742, 2002
79 2002 Formation of nonradiative defects in molecular beam epitaxial studied by optically detected magnetic resonance NQ Thinh, IA Buyanova, WM Chen, HP Xin, CW Tu
Applied Physics Letters 79 (19), 3089-3091, 2001
79 2001 Photoluminescence of GaN: Effect of electron irradiation IA Buyanova, M Wagner, WM Chen, B Monemar, JL Lindström, H Amano, ...
Applied physics letters 73 (20), 2968-2970, 1998
76 1998 Hydrogen-induced improvements in optical quality of GaNAs alloys IA Buyanova, M Izadifard, WM Chen, A Polimeni, M Capizzi, HP Xin, ...
Applied physics letters 82 (21), 3662-3664, 2003
74 2003