Emanuele Rimini
Emanuele Rimini
CNR-IMM e dipartimento Fisica university of Catania
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Ion beam handbook for material analysis
JW Mayer, E Rimini
Elsevier, 2012
A melting model for pulsing‐laser annealing of implanted semiconductors
P Baeri, SU Campisano, G Foti, E Rimini
Journal of Applied Physics 50 (2), 788-797, 1979
Ion irradiation and defect formation in single layer graphene
G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini
Carbon 47 (14), 3201-3207, 2009
Ion implantation: basics to device fabrication
E Rimini
Springer Science & Business Media, 1994
Ion-beam-induced epitaxial crystallization and amorphization in silicon
F Priolo, E Rimini
Materials Science Reports 5 (7-8), 321-379, 1990
Amorphous-to-crystal transition of nitrogen-and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
S Privitera, E Rimini, R Zonca
Applied physics letters 85 (15), 3044-3046, 2004
Voids in silicon by He implantation: From basic to applications
V Raineri, M Saggio, E Rimini
Journal of Materials Research 15 (7), 1449-1477, 2000
Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing
P Baeri, SU Campisano, G Foti, E Rimini
Applied Physics Letters 33 (2), 137-140, 1978
Silicon planar technology for single-photon optical detectors
E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ...
IEEE Transactions on Electron Devices 50 (4), 918-925, 2003
Screening length and quantum capacitance in graphene by scanning probe microscopy
F Giannazzo, S Sonde, V Raineri, E Rimini
Nano letters 9 (1), 23-29, 2009
He-vacancy interactions in Si and their influence on bubble formation and evolution
V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini
Physical Review B 61 (2), 937, 2000
Mapping the density of scattering centers limiting the electron mean free path in graphene
F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri
Nano letters 11 (11), 4612-4618, 2011
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6 (1), 23843, 2016
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
Segregation effects in Cu-implanted Si after laser-pulse melting
P Baeri, SU Campisano, G Foti, E Rimini
Physical Review Letters 41 (18), 1246, 1978
Kinetics of phase formation in Au—A1 thin films
SU Campisano, G Foti, E Rimini, SS Lau, JW Mayer
Philosophical Magazine 31 (4), 903-917, 1975
Mechanisms of amorphization in ion implanted crystalline silicon
SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
Crystal nucleation and growth processes in
S Privitera, C Bongiorno, E Rimini, R Zonca
Applied physics letters 84 (22), 4448-4450, 2004
Dechanneling by dislocations in ion-implanted Al
ST Picraux, E Rimini, G Foti, SU Campisano
Physical Review B 18 (5), 2078, 1978
Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface
P Baeri, JM Poate, SU Campisano, G Foti, E Rimini, AG Cullis
Applied Physics Letters 37 (10), 912-914, 1980
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