Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
1300 2015 Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ...
Nature Photonics 7 (6), 466-472, 2013
480 2013 The refractive index of S Gehrsitz, FK Reinhart, C Gourgon, N Herres, A Vonlanthen, H Sigg
Journal of Applied Physics 87 (11), 7825-7837, 2000
398 2000 Intersubband electroluminescence from silicon-based quantum cascade structures G Dehlinger, L Diehl, U Gennser, H Sigg, J Faist, K Ensslin, ...
Science 290 (5500), 2277-2280, 2000
377 2000 Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
250 2016 Three-dimensional Si/Ge quantum dot crystals D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ...
Nano letters 7 (10), 3150-3156, 2007
229 2007 Bilayer Al wire-grids as broadband and high-performance polarizers Y Ekinci, HH Solak, C David, H Sigg
Optics express 14 (6), 2323-2334, 2006
196 2006 Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ...
Applied Physics Letters 111 (9), 2017
195 2017 Characterisation of rare earth selective emitters for thermophotovoltaic applications B Bitnar, W Durisch, JC Mayor, H Sigg, HR Tschudi
Solar Energy Materials and Solar Cells 73 (3), 221-234, 2002
174 2002 Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5% RA Minamisawa, MJ Süess, R Spolenak, J Faist, C David, J Gobrecht, ...
Nature communications 3 (1), 1096, 2012
163 2012 Group IV direct band gap photonics: methods, challenges, and opportunities R Geiger, T Zabel, H Sigg
Frontiers in Materials 2, 52, 2015
136 2015 Analysis of polaron effects in the cyclotron resonance of n -GaAs and AlGaAs-GaAs heterojunctions H Sigg, P Wyder, J Perenboom
Physical Review B 31 (8), 5253, 1985
135 1985 GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ...
Acs Photonics 6 (10), 2462-2469, 2019
133 2019 Lasing in strained germanium microbridges FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ...
Nature communications 10 (1), 2724, 2019
124 2019 Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ...
Physical review letters 109 (5), 057402, 2012
123 2012 Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕ AlInAs quantum-cascade structures S Tsujino, A Borak, E Müller, M Scheinert, CV Falub, H Sigg, ...
Applied Physics Letters 86 (6), 2005
123 2005 Electroluminescence from strain-compensated L Diehl, S Menteşe, E Müller, D Grützmacher, H Sigg, U Gennser, ...
Applied Physics Letters 81 (25), 4700-4702, 2002
123 2002 Plasmonic radiance: probing structure at the ångström scale with visible light B Gallinet, T Siegfried, H Sigg, P Nordlander, OJF Martin
Nano letters 13 (2), 497-503, 2013
122 2013 Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion C Lange, NS Köster, S Chatterjee, H Sigg, D Chrastina, G Isella, ...
Physical Review B 79 (20), 201306, 2009
111 2009 GeSn/SiGeSn heterostructure and multi quantum well lasers D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ...
ACS photonics 5 (11), 4628-4636, 2018
109 2018 