| MoS2 Heterojunctions by Thickness Modulation M Tosun, D Fu, SB Desai, C Ko, JS Kang, DH Lien, M Najmzadeh, ... Scientific reports 5, 2015 | 118 | 2015 |
| The high-mobility bended n-channel silicon nanowire transistor KE Moselund, M Najmzadeh, P Dobrosz, SH Olsen, D Bouvet, ... IEEE transactions on electron devices 57 (4), 866-876, 2010 | 49 | 2010 |
| A silicon straight tube fluid density sensor M Najmzadeh, S Haasl, P Enoksson Journal of Micromechanics and Microengineering 17 (8), 1657-1663, 2007 | 37 | 2007 |
| Quantum well InAs/AlSb/GaSb vertical Tunnel FET with HSQ mechanical support Y Zeng, CI Kuo, C Hsu, M Najmzadeh, A Sachid, R Kapadia, C Yeung, ... IEEE Transactions on Nanotechnology 14, 580 - 584, 2015 | 27 | 2015 |
| Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs M Najmzadeh, L De Michielis, D Bouvet, P Dobrosz, S Olsen, AM Ionescu MNE 2009, Ghent, Belgium, 2009 | 27 | 2009 |
| Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain M Najmzadeh, D Bouvet, W Grabinski, JM Sallese, AM Ionescu Solid-State Electronics 74, 114-120, 2012 | 26 | 2012 |
| Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection M Najmzadeh, C Ko, K Wu, S Tongay, J Wu Applied Physics Express 9, 055201, 2016 | 24 | 2016 |
| Investigation of oxidation-induced strain in a top-down Si nanowire platform M Najmzadeh, D Bouvet, P Dobrosz, O Sarah, MA Ionescu INFOS 2009 (biennial), Cambridge, UK, 2009 | 20 | 2009 |
| Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu Solid-State Electronics (selected IEEE ULIS 2013; Warwick) 98, 55-62, 2014 | 17 | 2014 |
| 2D MOSFET operation of a fully-depleted bulk MoS2 at quasi-flatband back-gate M Najmzadeh, JP Duarte, S Khandelwal, Y Zeng, C Hu IEEE DRC 2015 (the 73rd IEEE Device Research Conf.; Ohio State University …, 2015 | 13 | 2015 |
| Asymmetrically strained all-silicon multi-gate n-Tunnel FETs M Najmzadeh, K Boucart, W Riess, AM Ionescu Solid-State Electronics 54 (9), 935-941, 2010 | 12 | 2010 |
| Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu IEEE Transactions on Electron Devices 59 (12), 3519-3526, 2012 | 11 | 2012 |
| Multi-gate buckled self-aligned dual Si nanowire MOSFETs on bulk Si for high electron mobility (Front Cover) M Najmzadeh, Y Tsuchiya, D Bouvet, W Grabinski, AM Ionescu IEEE Transactions on Nanotechnology 11 (5), C1, 2012 | 8* | 2012 |
| Multi-gate buckled self-aligned dual Si nanowire MOSFETs on bulk Si for high electron mobility M Najmzadeh, Y Tsuchiya, D Bouvet, W Grabinski, AM Ionescu IEEE Transactions on Nanotechnology 11 (5), 902-906, 2012 | 8 | 2012 |
| Accumulation-mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 8 | 2011 |
| Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 6 | 2011 |
| Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu 69th Device Research Conference, 145-146, 2011 | 5 | 2011 |
| Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu Ultimate Integration on Silicon (ULIS), 2013 14th international conference …, 2013 | 4 | 2013 |
| Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic M Najmzadeh, Y Tsuchiya, D Bouvet, W Grabinski, AM Ionescu Microelectronic Engineering 110, 278-281, 2013 | 4* | 2013 |
| Multi-gate Si nanowire MOSFETs: Fabrication, strain engineering and transport analysis M Najmzadeh EPFL, Ph.D. Thesis (#5507)., 2012 | 3 | 2012 |
Jean-Michel SalleseSenior scientist - Ecole polytechnique Federale de LausanneE-mail megerősítve itt: epfl.ch
