Követés
Jamil Akhtar
Jamil Akhtar
Chief Executive, Institute for Innovations in Science and Technology, Pilani, India
E-mail megerősítve itt: ceeri.res.in
Cím
Hivatkozott rá
Hivatkozott rá
Év
Fabrication of electron beam physical vapor deposited polysilicon piezoresistive MEMS pressure sensor
K Singh, R Joyce, S Varghese, J Akhtar
Sensors and Actuators A: Physical 223, 151-158, 2015
742015
Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
V Kumar, AS Maan, J Akhtar
Journal of Vacuum Science & Technology B 32 (4), 2014
742014
A digital hygrometer for trace moisture measurement
T Islam, AU Khan, J Akhtar, MZU Rahman
IEEE Transactions on Industrial Electronics 61 (10), 5599-5605, 2014
742014
Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices
J Singh, S Ranwa, J Akhtar, M Kumar
AIP Advances 5 (6), 2015
672015
Epitaxial 4H–SiC based Schottky diode temperature sensors in ultra-low current range
V Kumar, J Verma, AS Maan, J Akhtar
Vacuum 182, 109590, 2020
592020
Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors
V Kumar, S Pawar, AS Maan, J Akhtar
Journal of Vacuum Science & Technology B 33 (5), 2015
562015
Distributed MEMS mass-sensor based on piezoelectric resonant micro-cantilevers
P Joshi, S Kumar, VK Jain, J Akhtar, J Singh
Journal of Microelectromechanical Systems 28 (3), 382-389, 2019
522019
Synthesis, phase to phase deposition and characterization of rutile nanocrystalline titanium dioxide (TiO2) thin films
SK Gupta, J Singh, K Anbalagan, P Kothari, RR Bhatia, PK Mishra, ...
Applied Surface Science 264, 737-742, 2013
472013
Capacitance roll‐off and frequency‐dispersion capacitance–conductance phenomena in field plate and guard ring edge‐terminated Ni/SiO2/4H‐nSiC Schottky …
V Kumar, N Kaminski, AS Maan, J Akhtar
physica status solidi (a) 213 (1), 193-202, 2016
452016
MeV ion-induced movement of lattice disorder in single crystalline silicon
P Sen, J Akhtar, FM Russell
Europhysics Letters 51 (4), 401, 2000
412000
Synthesis and applications of ZnO nanowire: A review
S Bagga, J Akhtar, S Mishra
AIP Conference Proceedings 1989 (1), 2018
402018
Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode
SK Gupta, A Azam, J Akhtar
Physica B: Condensed Matter 406 (15-16), 3030-3035, 2011
402011
Capacitance–conductance spectroscopic investigation of interfacial oxide layer in Ni/4H–SiC (0 0 0 1) Schottky diode
SK Gupta, B Shankar, WR Taube, J Singh, J Akhtar
Physica B: Condensed Matter 434, 44-50, 2014
392014
Room temperature single walled carbon nanotubes (SWCNT) chemiresistive ammonia gas sensor
BS Dasari, WR Taube, PB Agarwal, M Rajput, A Kumar, J Akhtar
Sensors & Transducers 190 (7), 24, 2015
382015
Investigation of structural and magnetic properties of Ni, NiFe and NiFe2O4 thin films
J Singh, SK Gupta, AK Singh, P Kothari, RK Kotnala, J Akhtar
Journal of magnetism and magnetic materials 324 (6), 999-1005, 2012
382012
Fabrication of poly (vinylidene fluoride-trifluoroethylene)–Zinc oxide based piezoelectric pressure sensor
SC Karumuthil, K Singh, U Valiyaneerilakkal, J Akhtar, S Varghese
Sensors and Actuators A: Physical 303, 111677, 2020
372020
Effect of semiconductor on sensitivity of a graphene-based surface plasmon resonance biosensor
G Mohanty, J Akhtar, BK Sahoo
Plasmonics 11, 189-196, 2016
372016
An oscillator-based active bridge circuit for interfacing capacitive sensors with microcontroller compatibility
AU Khan, T Islam, J Akhtar
IEEE Transactions on Instrumentation and Measurement 65 (11), 2560-2568, 2016
362016
MEMS impedance flow cytometry designs for effective manipulation of micro entities in health care applications
M Kumar, S Yadav, A Kumar, NN Sharma, J Akhtar, K Singh
Biosensors and Bioelectronics 142, 111526, 2019
352019
Design, fabrication, and characterization of Ni/4H-SiC (0001) Schottky diodes array equipped with field plate and floating guard ring edge termination structures
SK Gupta, N Pradhan, C Shekhar, J Akhtar
IEEE transactions on semiconductor manufacturing 25 (4), 664-672, 2012
332012
A rendszer jelenleg nem tudja elvégezni a műveletet. Próbálkozzon újra később.
Cikkek 1–20