Folgen
Mark Wistey
Mark Wistey
Associate Professor of Physics, Texas State University
Bestätigte E-Mail-Adresse bei txstate.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ...
Journal of Applied Physics 101 (11), 2007
2532007
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
1952012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
1782012
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
1632012
Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned
Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
1362012
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
1162009
Recent Progress on 1.55- Dilute-Nitride Lasers
SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ...
IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007
1122007
Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris
IEEE journal of quantum electronics 40 (6), 656-664, 2004
1122004
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
1082003
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near
G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE Electron Device Letters 33 (6), 782-784, 2012
1052012
GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy
V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
1012002
Ultralow resistance in situ Ohmic contacts to InGaAs/InP
U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 2008
962008
Long-wavelength GaInNAs (Sb) lasers on GaAs
W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
95*2002
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
932002
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications
JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ...
physica status solidi (b) 244 (8), 2707-2729, 2007
832007
Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs
SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris Jr
Electronics Letters 42 (3), 1, 2006
782006
Low-threshold CW GaInNAsSb/GaAs laser at 1.49 mm
SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris Jr
Electron. Lett 39 (20), 1445-1446, 2003
772003
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
742009
Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate
G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
722011
Chemical routes to Ge∕ Si (100) structures for low temperature Si-based semiconductor applications
MA Wistey, YY Fang, J Tolle, AVG Chizmeshya, J Kouvetakis
Applied Physics Letters 90 (8), 2007
672007
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20