Moritz Brehm
Zitiert von
Zitiert von
Lasing from glassy Ge quantum dots in crystalline Si
M Grydlik, F Hackl, H Groiss, M Glaser, A Halilovic, T Fromherz, W Jantsch, ...
ACS photonics 3 (2), 298-303, 2016
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ...
Physical Review B—Condensed Matter and Materials Physics 80 (20), 205321, 2009
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
M Grydlik, G Langer, T Fromherz, F Schäffler, M Brehm
Nanotechnology 24 (10), 105601, 2013
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
M Brehm, M Grydlik
Nanotechnology 28 (39), 392001, 2017
Enhanced telecom emission from single group-IV quantum dots by precise CMOS-compatible positioning in photonic crystal cavities
M Schatzl, F Hackl, M Glaser, P Rauter, M Brehm, L Spindlberger, ...
ACS photonics 4 (3), 665-673, 2017
Ultra-steep side facets in multi-faceted SiGe/Si (001) Stranski-Krastanow islands
M Brehm, H Lichtenberger, T Fromherz, G Springholz
Nanoscale research letters 6, 1-8, 2011
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates
G Vastola, M Grydlik, M Brehm, T Fromherz, G Bauer, F Boioli, L Miglio, ...
Physical Review B—Condensed Matter and Materials Physics 84 (15), 155415, 2011
Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers
J Zhang, M Brehm, M Grydlik, OG Schmidt
Chemical Society Reviews 44 (1), 26-39, 2015
The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer
M Brehm, M Grydlik, H Groiss, F Hackl, F Schäffler, T Fromherz, G Bauer
Journal of Applied Physics 109 (12), 2011
Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si (001) substrates
F Hackl, M Grydlik, M Brehm, H Groiss, F Schäffler, T Fromherz, G Bauer
Nanotechnology 22 (16), 165302, 2011
Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations
M Brehm, T Suzuki, T Fromherz, Z Zhong, N Hrauda, F Hackl, J Stangl, ...
New Journal of Physics 11 (6), 063021, 2009
Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si
M Grydlik, MT Lusk, F Hackl, A Polimeni, T Fromherz, W Jantsch, ...
Nano letters 16 (11), 6802-6807, 2016
UV nanoimprint lithography for the realization of large-area ordered SiGe/Si (001) island arrays
E Lausecker, M Brehm, M Grydlik, F Hackl, I Bergmair, M Mühlberger, ...
Applied Physics Letters 98 (14), 2011
Room-temperature group-IV LED based on defect-enhanced Ge quantum dots
P Rauter, L Spindlberger, F Schäffler, T Fromherz, J Freund, M Brehm
ACS Photonics 5 (2), 431-438, 2018
Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers
H Groiss, M Glaser, M Schatzl, M Brehm, D Gerthsen, D Roth, P Bauer, ...
Scientific reports 7 (1), 16114, 2017
Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)
M Brehm, M Grydlik, H Lichtenberger, T Fromherz, N Hrauda, W Jantsch, ...
Applied Physics Letters 93 (12), 2008
Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio
M Grydlik, M Brehm, F Hackl, H Groiss, T Fromherz, F Schäffler, G Bauer
New Journal of Physics 12 (6), 063002, 2010
Excitation intensity driven PL shifts of SiGe islands on patterned and planar Si (001) substrates: evidence for Ge-rich dots in islands
M Brehm, M Grydlik, F Hackl, E Lausecker, T Fromherz, G Bauer
Nanoscale research letters 5, 1868-1872, 2010
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
IA Fischer, M Brehm, M De Seta, G Isella, DJ Paul, M Virgilio, G Capellini
APL Photonics 7 (5), 2022
Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots
H Groiss, L Spindlberger, P Oberhumer, F Schäffler, T Fromherz, ...
Semiconductor Science and Technology 32 (2), 02LT01, 2017
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