Comprehensive analysis of Si-doped N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
514 1984 Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
386 2000 Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ...
Applied Physics Letters 101 (9), 2012
245 2012 Time-resolved Raman scattering in GaAs quantum wells DY Oberli, DR Wake, MV Klein, J Klem, T Henderson, H Morkoc
Physical review letters 59 (6), 696, 1987
241 1987 Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices WT Masselink, PJ Pearah, J Klem, CK Peng, H Morkoç, GD Sanders, ...
Physical Review B 32 (12), 8027, 1985
237 1985 Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy R Fischer, WT Masselink, J Klem, T Henderson, TC McGlinn, MV Klein, ...
Journal of Applied Physics 58 (1), 374-381, 1985
230 1985 InGaAsN/GaAs heterojunction for multi-junction solar cells SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
228 2001 Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors AA Ketterson, WT Masselink, JS Gedymin, J Klem, CK Peng, WF Kopp, ...
IEEE transactions on electron devices 33 (5), 564-571, 1986
172 1986 Phased-array sources based on nonlinear metamaterial nanocavities O Wolf, S Campione, A Benz, AP Ravikumar, S Liu, TS Luk, EA Kadlec, ...
Nature communications 6 (1), 7667, 2015
161 2015 Ordering in GaAs1−x Sbx YE Ihm, N Otsuka, J Klem, H Morkoc
Applied physics letters 51 (24), 2013-2015, 1987
146 1987 Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures R Fischer, J Klem, TJ Drummond, RE Thorne, W Kopp, H Morkoc, AY Cho
Journal of Applied Physics 54 (5), 2508-2510, 1983
145 1983 Interband-cascade infrared photodetectors with superlattice absorbers RQ Yang, Z Tian, Z Cai, JF Klem, MB Johnson, HC Liu
Journal of Applied Physics 107 (5), 2010
136 2010 Strong coupling in the sub-wavelength limit using metamaterial nanocavities A Benz, S Campione, S Liu, I Montano, JF Klem, A Allerman, JR Wendt, ...
Nature communications 4 (1), 2882, 2013
124 2013 Optical properties of GaAs on (100) Si using molecular beam epitaxy WT Masselink, T Henderson, J Klem, R Fischer, P Pearah, H Morkoc, ...
Applied physics letters 45 (12), 1309-1311, 1984
123 1984 Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon R Fischer, T Henderson, J Klem, WT Masselink, W Kopp, H Morkoc, ...
Electronics Letters 20 (22), 945-947, 1984
121 1984 Conductance modulation in double quantum wells due to magnetic field-induced anticrossing JA Simmons, SK Lyo, NE Harff, JF Klem
Physical review letters 73 (16), 2256, 1994
119 1994 OC-48 capable InGaAsN vertical cavity lasers AW Jackson, RL Naone, MJ Dalberth, JM Smith, KJ Malone, DW Kisker, ...
Electronics Letters 37 (6), 355-356, 2001
117 2001 On the collapse of drain IV characteristics in modulation-doped FET's at cryogenic temperatures R Fischer, TJ Drummond, J Klem, W Kopp, TS Henderson, D Perrachione, ...
IEEE Transactions on Electron Devices 31 (8), 1028-1032, 1984
117 1984 Use of a superlattice to enhance the interface properties between two bulk heterolayers TJ Drummond, J Klem, D Arnold, R Fischer, RE Thorne, WG Lyons, ...
Applied Physics Letters 42 (7), 615-617, 1983
115 1983 Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy SR Kurtz, JF Klem, AA Allerman, RM Sieg, CH Seager, ED Jones
Applied physics letters 80 (8), 1379-1381, 2002
114 2002 