Követés
Otwin Breitenstein
Otwin Breitenstein
Researcher, Max Planck Institute, Associate Professor, University Halle
E-mail megerősítve itt: mpi-halle.mpg.de
Cím
Hivatkozott rá
Hivatkozott rá
Év
Lock-in thermography: Basics and use for evaluating electronic devices and materials
O Breitenstein, W Warta, M Langenkamp
Springer, 2010
975*2010
Shunt types in crystalline silicon solar cells
O Breitenstein, JP Rakotoniaina, MH Al Rifai, M Werner
Progress in Photovoltaics: Research and Applications 12 (7), 529-538, 2004
3982004
Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
V Naumann, D Lausch, A Hähnel, J Bauer, O Breitenstein, A Graff, ...
Solar Energy Materials and Solar Cells 120, 383-389, 2014
3702014
On the detection of shunts in silicon solar cells by photo‐and electroluminescence imaging
O Breitenstein, J Bauer, T Trupke, RA Bardos
Progress in Photovoltaics: research and Applications 16 (4), 325-330, 2008
1782008
Understanding junction breakdown in multicrystalline solar cells
O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ...
Journal of Applied Physics 109 (7), 2011
1642011
Shunts due to laser scribing of solar cells evaluated by highly sensitive lock-in thermography
O Breitenstein, M Langenkamp, O Lang, A Schirrmacher
Solar Energy Materials and Solar Cells 65 (1-4), 55-62, 2001
1642001
Quantitative evaluation of shunts in solar cells by lock‐in thermography
O Breitenstein, JP Rakotoniaina, MHA Rifai
Progress in Photovoltaics: Research and Applications 11 (8), 515-526, 2003
1612003
On the mechanism of potential‐induced degradation in crystalline silicon solar cells
J Bauer, V Naumann, S Großer, C Hagendorf, M Schütze, O Breitenstein
physica status solidi (RRL)–Rapid Research Letters 6 (8), 331-333, 2012
1552012
Potential-induced degradation (PID): Introduction of a novel test approach and explanation of increased depletion region recombination
D Lausch, V Naumann, O Breitenstein, J Bauer, A Graff, J Bagdahn, ...
IEEE journal of photovoltaics 4 (3), 834-840, 2014
1462014
Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation
S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ...
Journal of Applied Physics 110 (1), 2011
1372011
Nondestructive local analysis of current–voltage characteristics of solar cells by lock-in thermography
O Breitenstein
Solar Energy Materials and Solar Cells 95 (10), 2933-2936, 2011
1342011
Microscopic lock-in thermography investigation of leakage sites in integrated circuits
O Breitenstein, M Langenkamp, F Altmann, D Katzer, A Lindner, H Eggers
Review of scientific instruments 71 (11), 4155-4160, 2000
1272000
The role of stacking faults for the formation of shunts during potential‐induced degradation of crystalline Si solar cells
V Naumann, D Lausch, A Graff, M Werner, S Swatek, J Bauer, A Hähnel, ...
physica status solidi (RRL)–Rapid Research Letters 7 (5), 315-318, 2013
1262013
Quantitative evaluation of electroluminescence images of solar cells
O Breitenstein, A Khanna, Y Augarten, J Bauer, JM Wagner, K Iwig
physica status solidi (RRL)–Rapid Research Letters 4 (1‐2), 7-9, 2010
1202010
Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits
J Bauer, JM Wagner, A Lotnyk, H Blumtritt, B Lim, J Schmidt, ...
physica status solidi (RRL)–Rapid Research Letters 3 (2‐3), 40-42, 2009
1102009
Sodium outdiffusion from stacking faults as root cause for the recovery process of potential-induced degradation (PID)
D Lausch, V Naumann, A Graff, A Hähnel, O Breitenstein, C Hagendorf, ...
Energy Procedia 55, 486-493, 2014
1072014
The origin of ideality factors n> 2 of shunts and surfaces in the dark IV curves of Si solar cells
O Breitenstein, P Altermatt, K Ramspeck, A Schenk
Proceedings of the 21st European photovoltaic solar energy conference, 625-628, 2006
1072006
Defect induced non-ideal dark I–V characteristics of solar cells
O Breitenstein, J Bauer, A Lotnyk, JM Wagner
Superlattices and Microstructures 45 (4-5), 182-189, 2009
1042009
Can luminescence imaging replace lock-in thermography on solar cells?
O Breitenstein, J Bauer, K Bothe, D Hinken, J Müller, W Kwapil, ...
IEEE Journal of Photovoltaics 1 (2), 159-167, 2011
1022011
Lock-in IR-thermography-A novel tool for material and device characterization
ST Huth, O Breitenstein, A Huber, D Dantz, U Lambert, F Altmann
diffusion and defect data part B solid state phenomena, 741-746, 2002
992002
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