| Phase change memory HSP Wong, S Raoux, SB Kim, J Liang, JP Reifenberg, B Rajendran, ... Proceedings of the IEEE 98 (12), 2201-2227, 2010 | 2281 | 2010 |
| Cross-point memory array without cell selectors—Device characteristics and data storage pattern dependencies J Liang, HSP Wong IEEE Transactions on Electron Devices 57 (10), 2531-2538, 2010 | 318 | 2010 |
| Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode H Tian, HY Chen, B Gao, S Yu, J Liang, Y Yang, D Xie, J Kang, TL Ren, ... Nano letters 13 (2), 651-657, 2013 | 155 | 2013 |
| An ultra-low reset current cross-point phase change memory with carbon nanotube electrodes J Liang, RGD Jeyasingh, HY Chen, HSP Wong IEEE Transactions on Electron Devices 59 (4), 1155-1163, 2012 | 100 | 2012 |
| Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays S Yu, J Liang, Y Wu, HSP Wong Nanotechnology 21 (46), 465202, 2010 | 83 | 2010 |
| Effect of wordline/bitline scaling on the performance, energy consumption, and reliability of cross-point memory array J Liang, S Yeh, SS Wong, HSP Wong ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (1), 1-14, 2013 | 82 | 2013 |
| Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection D Akinwande, J Liang, S Chong, Y Nishi, HSP Wong Journal of Applied Physics 104 (12), 2008 | 79 | 2008 |
| A 1.4 µA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application J Liang, RGD Jeyasingh, HY Chen, HSP Wong 2011 Symposium on VLSI Technology-Digest of Technical Papers, 100-101, 2011 | 63 | 2011 |
| Carbon nanotube electronics-materials, devices, circuits, design, modeling, and performance projection HSP Wong, S Mitra, D Akinwande, C Beasley, Y Chai, HY Chen, X Chen, ... 2011 International Electron Devices Meeting, 23.1. 1-23.1. 4, 2011 | 49 | 2011 |
| High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020cm−3 G Thareja, J Liang, S Chopra, B Adams, N Patil, SL Cheng, A Nainani, ... 2010 International Electron Devices Meeting, 10.5. 1-10.5. 4, 2010 | 49 | 2010 |
| Scaling challenges for the cross-point resistive memory array to sub-10nm node-an interconnect perspective J Liang, S Yeh, SS Wong, HSP Wong 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 45 | 2012 |
| 1D selection device using carbon nanotube FETs for high-density cross-point memory arrays C Ahn, Z Jiang, CS Lee, HY Chen, J Liang, LS Liyanage, HSP Wong IEEE Transactions on Electron Devices 62 (7), 2197-2204, 2015 | 41 | 2015 |
| Carrier density and quantum capacitance for semiconducting carbon nanotubes J Liang, D Akinwande, HSP Wong Journal of Applied Physics 104 (6), 2008 | 37 | 2008 |
| Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM) HSP Wong, SB Kim, B Lee, MA Caldwell, J Liang, Y Wu, RGD Jeyasingh, ... Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE …, 0 | 27* | |
| Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory HY Chen, H Tian, B Gao, S Yu, J Liang, J Kang, Y Zhang, TL Ren, ... 2012 International Electron Devices Meeting, 20.5. 1-20.5. 4, 2012 | 23 | 2012 |
| The localized-SOI MOSFET as a candidate for analog/RF applications H Xiao, R Huang, J Liang, H Liu, Y Tian, R Wang, Y Wang IEEE Transactions on electron devices 54 (8), 1978-1984, 2007 | 23 | 2007 |
| Phase change memory: Scaling and applications R Jeyasingh, J Liang, MA Caldwell, D Kuzum, HSP Wong Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 1-7, 2012 | 20 | 2012 |
| Design optimization of structural parameters in double gate MOSFETs for RF applications J Liang, H Xiao, R Huang, P Wang, Y Wang Semiconductor science and technology 23 (5), 055019, 2008 | 19 | 2008 |
| Size limitation of cross-point memory array and its dependence on data storage pattern and device parameters J Liang, HSP Wong 2010 IEEE International Interconnect Technology Conference, 1-3, 2010 | 18 | 2010 |
| Partially depleted (PD) semiconductor-on-insulator (SOI) field effect transistor (FET) structure with a gate-to-body tunnel current region for threshold voltage (VT) lowering … BA Anderson, A Bryant, J Liang, EJ Nowak US Patent 8,698,245, 2014 | 11 | 2014 |
