Követés
Nicholas R. Glavin
Nicholas R. Glavin
E-mail megerősítve itt: us.af.mil
Cím
Hivatkozott rá
Hivatkozott rá
Év
Emerging applications of elemental 2D materials
NR Glavin, R Rao, V Varshney, E Bianco, A Apte, A Roy, E Ringe, ...
Advanced Materials 32 (7), 1904302, 2020
3232020
Two-Dimensional Materials in Biosensing and Healthcare: From In Vitro Diagnostics to Optogenetics and Beyond
A Bolotsky, D Butler, C Dong, K Gerace, NR Glavin, C Muratore, ...
ACS nano 13 (9), 9781-9810, 2019
2202019
Flexible gallium nitride for high‐performance, strainable radio‐frequency devices
NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ...
Advanced Materials 29 (47), 1701838, 2017
1042017
Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition
NR Glavin, ML Jespersen, MH Check, J Hu, AM Hilton, TS Fisher, ...
Thin Solid Films 572, 245-250, 2014
1032014
2D Boron Nitride: Synthesis and Applications
GR Bhimanapati, NR Glavin, JA Robinson
Semiconductors and Semimetals 95, 101-147, 2016
992016
Amorphous boron nitride: a universal, ultrathin dielectric for 2D nanoelectronics
NR Glavin, C Muratore, ML Jespersen, J Hu, PT Hagerty, AM Hilton, ...
Advanced Functional Materials 26 (16), 2640-2647, 2016
832016
Polytypism in ultrathin tellurium
A Apte, E Bianco, A Krishnamoorthy, S Yazdi, R Rao, N Glavin, ...
2D Materials 6 (1), 015013, 2018
642018
Physical vapor deposition of 2D Van der Waals materials: a review
C Muratore, AA Voevodin, NR Glavin
Thin Solid Films 688, 137500, 2019
632019
Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
B Sirota, N Glavin, S Krylyuk, AV Davydov, AA Voevodin
Scientific Reports 8 (1), 8668, 2018
522018
Direct synthesis of ultra-thin large area transition metal dichalcogenides and their heterostructures on stretchable polymer surfaces
ME McConney, NR Glavin, AT Juhl, MH Check, MF Durstock, ...
Journal of Materials Research 31 (7), 967-974, 2016
432016
2D Electrets of Ultrathin MoO2 with Apparent Piezoelectricity
A Apte, K Mozaffari, FS Samghabadi, JA Hachtel, L Chang, S Susarla, ...
Advanced Materials 32 (24), 2000006, 2020
422020
Room temperature magnetron sputtering and laser annealing of ultrathin MoS2 for flexible transistors
B Sirota, N Glavin, AA Voevodin
Vacuum 160, 133-138, 2019
402019
Preservation of surface conductivity and dielectric loss tangent in large‐scale, encapsulated epitaxial graphene measured by noncontact microwave cavity perturbations
AF Rigosi, NR Glavin, CI Liu, Y Yang, J Obrzut, HM Hill, J Hu, HY Lee, ...
Small 13 (26), 1700452, 2017
402017
Photonic crystallization of two-dimensional MoS2 for stretchable photodetectors
RH Kim, J Leem, C Muratore, SW Nam, R Rao, A Jawaid, M Durstock, ...
Nanoscale, 2019
382019
Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene
AF Rigosi, HM Hill, NR Glavin, SJ Pookpanratana, Y Yang, AG Boosalis, ...
2D Materials 5 (1), 011011, 2017
382017
Light–matter coupling in large-area van der Waals superlattices
P Kumar, J Lynch, B Song, H Ling, F Barrera, K Kisslinger, H Zhang, ...
Nature nanotechnology 17 (2), 182-189, 2022
372022
Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films
NR Glavin, C Muratore, ML Jespersen, J Hu, TS Fisher, AA Voevodin
Journal of Applied Physics 117 (16), 165305, 2015
372015
Facile post-deposition annealing of graphene ink enables ultrasensitive electrochemical detection of dopamine
D Butler, D Moore, NR Glavin, JA Robinson, A Ebrahimi
ACS Applied Materials & Interfaces 13 (9), 11185-11194, 2021
342021
Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation
AF Rigosi, CI Liu, NR Glavin, Y Yang, HM Hill, J Hu, AR Hight Walker, ...
ACS omega 2 (5), 2326-2332, 2017
332017
In situ crystallization kinetics of two-dimensional MoS2
RA Vilá, R Rao, C Muratore, E Bianco, JA Robinson, B Maruyama, ...
2D Materials, 2017
322017
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