Assignment of deep levels causing yellow luminescence in GaN CB Soh, SJ Chua, HF Lim, DZ Chi, S Tripathy, W Liu Journal of applied physics 96 (3), 1341-1347, 2004 | 132 | 2004 |
Identification of deep levels in GaN associated with dislocations CB Soh, SJ Chua, HF Lim, DZ Chi, W Liu, S Tripathy Journal of Physics: Condensed Matter 16 (34), 6305, 2004 | 101 | 2004 |
Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template H Hartono, CB Soh, SY Chow, SJ Chua, EA Fitzgerald Applied physics letters 90 (17), 2007 | 71 | 2007 |
Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures CB Soh, W Liu, JH Teng, SY Chow, SS Ang, SJ Chua Applied Physics Letters 92 (26), 2008 | 55 | 2008 |
Nanopore morphology in porous GaN template and its effect on the LEDs emission CB Soh, CB Tay, RJN Tan, AP Vajpeyi, IP Seetoh, KK Ansah-Antwi, ... Journal of Physics D: Applied Physics 46 (36), 365102, 2013 | 50 | 2013 |
Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth CB Soh, H Hartono, SY Chow, SJ Chua, EA Fitzgerald Applied physics letters 90 (5), 2007 | 42 | 2007 |
Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire AM Yong, CB Soh, XH Zhang, SY Chow, SJ Chua Thin Solid Films 515 (10), 4496-4500, 2007 | 41 | 2007 |
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) SJ Chua, H Hartono, CB Soh US Patent App. 11/823,756, 2009 | 35 | 2009 |
Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence IP Seetoh, CB Soh, EA Fitzgerald, SJ Chua Applied Physics Letters 102 (10), 2013 | 34 | 2013 |
Enhanced luminescence efficiency due to carrier localization in InGaN∕ GaN heterostructures grown on nanoporous GaN templates CB Soh, SY Chow, LY Tan, H Hartono, W Liu, SJ Chua Applied Physics Letters 93 (17), 2008 | 33 | 2008 |
PMU placement for measurement redundancy distribution considering zero injection bus and contingencies X Chen, F Wei, S Cao, CB Soh, KJ Tseng IEEE Systems Journal 14 (4), 5396-5406, 2020 | 32 | 2020 |
Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs CB Soh, CB Tay, SJ Chua, HQ Le, NSS Ang, JH Teng Journal of crystal growth 312 (11), 1848-1854, 2010 | 31 | 2010 |
High quality GaN grown from a nanoporous GaN template H Hartono, CB Soh, SJ Chua, EA Fitzgerald Journal of the Electrochemical society 154 (12), H1004, 2007 | 31 | 2007 |
Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1− x− yN∕ GaN interface CB Soh, SJ Chua, S Tripathy, SY Chow, DZ Chi, W Liu Journal of applied physics 98 (10), 2005 | 28 | 2005 |
Fabrication of phosphor free red and white nitride-based LEDs CB Soh, SJ Chua, W Liu, JH Teng US Patent 8,436,334, 2013 | 27 | 2013 |
Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes K Dai, CB Soh, SJ Chua, L Wang, D Huang Journal of Applied Physics 109 (8), 2011 | 27 | 2011 |
Development of (Zr,Mn) doped X-type hexaferrites for high frequency EMI shielding applications HK Ye, SR Shannigrahi, CB Soh, SLW Yang, LS Li, DVM Repka, P Kumar Journal of Magnetism and Magnetic Materials 465, 716-726, 2018 | 26 | 2018 |
Quantum dots excited InGaN/GaN phosphor‐free white LEDs SJ Chua, CB Soh, W Liu, JH Teng, SS Ang, SL Teo physica status solidi c 5 (6), 2189-2191, 2008 | 23 | 2008 |
Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition W Liu, CB Soh, P Chen, SJ Chua Journal of crystal growth 268 (3-4), 509-514, 2004 | 23 | 2004 |
The influence of V defects on luminescence properties of AlInGaN quaternary alloys CB Soh, SJ Chua, S Tripathy, W Liu, DZ Chi Journal of Physics: Condensed Matter 17 (4), 729, 2005 | 22 | 2005 |