| Field effect transistors for terahertz detection: Physics and first imaging applications W Knap, M Dyakonov, D Coquillat, F Teppe, N Dyakonova, J Łusakowski, ... Journal of Infrared, Millimeter, and Terahertz Waves 30, 1319-1337, 2009 | 446 | 2009 |
| Broadband terahertz imaging with highly sensitive silicon CMOS detectors F Schuster, D Coquillat, H Videlier, M Sakowicz, F Teppe, L Dussopt, ... Optics express 19 (8), 7827-7832, 2011 | 396 | 2011 |
| Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects M Sakowicz, MB Lifshits, OA Klimenko, F Schuster, D Coquillat, F Teppe, ... Journal of Applied Physics 110 (5), 2011 | 199 | 2011 |
| Charge separation in semicrystalline polymeric semiconductors by photoexcitation: is the mechanism intrinsic or extrinsic? F Paquin, G Latini, M Sakowicz, PL Karsenti, L Wang, D Beljonne, ... Physical review letters 106 (19), 197401, 2011 | 168 | 2011 |
| Two-dimensional spatial coherence of excitons in semicrystalline polymeric semiconductors: Effect of molecular weight F Paquin, H Yamagata, NJ Hestand, M Sakowicz, N Bérubé, M Côté, ... Physical Review B 88 (15), 155202, 2013 | 125 | 2013 |
| A broadband THz imager in a low-cost CMOS technology F Schuster, H Videlier, A Dupret, D Coquillat, M Sakowicz, JP Rostaing, ... 2011 IEEE International Solid-State Circuits Conference, 42-43, 2011 | 104 | 2011 |
| Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors M Sakowicz, J Łusakowski, K Karpierz, M Grynberg, W Knap, W Gwarek Journal of Applied Physics 104 (2), 2008 | 69 | 2008 |
| Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors S Nadar, H Videlier, D Coquillat, F Teppe, M Sakowicz, N Dyakonova, ... Journal of Applied Physics 108 (5), 2010 | 56 | 2010 |
| Field effect transistors for terahertz detection and emission W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ... Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011 | 52 | 2011 |
| Terahertz radiation detection by field effect transistor in magnetic field S Boubanga-Tombet, M Sakowicz, D Coquillat, F Teppe, W Knap, ... Applied Physics Letters 95 (7), 2009 | 41 | 2009 |
| Low frequency noise and trap density in GaN/AlGaN field effect transistors P Sai, J Jorudas, M Dub, M Sakowicz, V Jakątas, DB But, P Prystawko, ... Applied Physics Letters 115 (18), 2019 | 29 | 2019 |
| The effect of phase morphology on the nature of long-lived charges in semiconductor polymer: fullerene systems F Dou, E Buchaca-Domingo, M Sakowicz, E Rezasoltani, ... Journal of Materials Chemistry C 3 (15), 3722-3729, 2015 | 24 | 2015 |
| AlGaN/GaN on SiC devices without a GaN buffer layer: Electrical and noise characteristics J Jorudas, A ©imukovič, M Dub, M Sakowicz, P Prystawko, S Indriąiūnas, ... Micromachines 11 (12), 1131, 2020 | 22 | 2020 |
| Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕ GaN heterostructures P Lorenzini, Z Bougrioua, A Tiberj, R Tauk, M Azize, M Sakowicz, ... Applied Physics Letters 87 (23), 2005 | 22 | 2005 |
| Optical performance of two dimensional electron gas and GaN: C buffer layers in AlGaN/AlN/GaN heterostructures on SiC substrate RB Adamov, D Pashnev, VA Shalygin, MD Moldavskaya, MY Vinnichenko, ... Applied Sciences 11 (13), 6053, 2021 | 18 | 2021 |
| AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range P Sai, DB But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, ... Semiconductor Science and Technology 34 (2), 024002, 2019 | 18 | 2019 |
| Recombination dynamics in InGaN/GaN nanowire heterostructures on Si (111) V Cardin, LI Dion-Bertrand, P Grégoire, HPT Nguyen, M Sakowicz, Z Mi, ... Nanotechnology 24 (4), 045702, 2013 | 18 | 2013 |
| Imaging above 1 THz limit with Si-MOSFET detectors F Schuster, H Videlier, M Sakowicz, F Teppe, D Coquillat, B Dupont, ... 35th International Conference on Infrared, Millimeter, and Terahertz Waves, 1-2, 2010 | 18 | 2010 |
| Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields M Sakowicz, J Łusakowski, K Karpierz, M Grynberg, W Knap, K Köhler, ... Applied Physics Letters 92 (20), 2008 | 17 | 2008 |
| Graphene as a Schottky barrier contact to AlGaN/GaN heterostructures M Dub, P Sai, A Przewłoka, A Krajewska, M Sakowicz, P Prystawko, ... Materials 13 (18), 4140, 2020 | 15 | 2020 |
