Peter J Parbrook
Peter J Parbrook
Stokes Professor of Nitride Materials, University College Cork
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Hivatkozott rá
Hivatkozott rá
Light-emitting semiconductor device
M Ishikawa, H Sugawara, Y Nishikawa, M Onomura, S Saito, PJ Parbrook, ...
US Patent 5,696,389, 1997
Semicoductor device having a hetero interface with a lowered barrier
S Saito, M Onomura, Y Nishikawa, M Ishikawa, PJ Parbrook
US Patent 5,821,555, 1998
Many-beam dynamical simulation of electron backscatter diffraction patterns
A Winkelmann, C Trager-Cowan, F Sweeney, AP Day, P Parbrook
Ultramicroscopy 107 (4-5), 414-421, 2007
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
WS Tan, PA Houston, PJ Parbrook, DA Wood, G Hill, CR Whitehouse
Applied physics letters 80 (17), 3207-3209, 2002
Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
C Trager-Cowan, F Sweeney, PW Trimby, AP Day, A Gholinia, ...
Physical Review B 75 (8), 085301, 2007
Valence band offset of heterojunctions measured by x-ray photoelectron spectroscopy
PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ...
Applied physics letters 90 (13), 132105, 2007
A study of dislocations in AlN and GaN films grown on sapphire substrates
J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis
Journal of crystal growth 282 (3-4), 290-296, 2005
Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
JP O’Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook
Applied Physics Letters 83 (10), 1965-1967, 2003
Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors
WS Tan, PA Houston, PJ Parbrook, G Hill, RJ Airey
Journal of Physics D: Applied Physics 35 (7), 595, 2002
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ...
Nanoscale 7 (40), 16658-16665, 2015
In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy
KB Ozanyan, PJ Parbrook, M Hopkinson, CR Whitehouse, Z Sobiesierski, ...
Journal of applied physics 82 (1), 474-476, 1997
Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope
G Naresh-Kumar, B Hourahine, PR Edwards, AP Day, A Winkelmann, ...
Physical review letters 108 (13), 135503, 2012
The MOCVD growth without prereaction of ZnSe and ZnS layers
PJ Wright, PJ Parbrook, B Cockayne, AC Jones, ED Orrell, KP O'Donnell, ...
Journal of crystal growth 94 (2), 441-447, 1989
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN
MP Halsall, P Harmer, PJ Parbrook, SJ Henley
Physical Review B 69 (23), 235207, 2004
Air-bridged lateral growth of an layer by introduction of porosity in an AlN buffer
T Wang, J Bai, PJ Parbrook, AG Cullis
Applied Physics Letters 87 (15), 151906, 2005
Doping of III-nitride materials
P Pampili, PJ Parbrook
Materials Science in Semiconductor Processing 62, 180-191, 2017
Time evolution of the screening of piezoelectric fields in InGaN quantum wells
IH Brown, P Blood, PM Smowton, JD Thomson, SM Olaizola, AM Fox, ...
IEEE journal of quantum electronics 42 (12), 1202-1208, 2006
Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods
M Conroy, VZ Zubialevich, H Li, N Petkov, JD Holmes, PJ Parbrook
Journal of Materials Chemistry C 3 (2), 431-437, 2015
Composition-dependent band gap and band-edge bowing in AlInN: A combined theoretical and experimental study
S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly
Applied Physics Express 6 (12), 121001, 2013
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